PAM XIAMEN offers 80+1mm FZ Si Ingot-5
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
10,000Ωcm>Resistivity>3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-17meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1000
P/E
>5
SEMI Prime, in hard cassettes of 6, 6 & 7 wafers
n-type Si:P
[111-5° towards[110]] ±0.25°
3″
1300
P/E
>5
SEMI Prime, hard cst
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
E/E
>5
SEMI, LaserMark, in opened hard cast
n-type Si:P
[111-2.5°] ±0.5°
3″
380
P/E
1-3
SEMI Prime
n-type Si:P
[111] ±0.5°
3″
380
P/E
1-10
SEMI Primet
n-type Si:P
[111-3.0°] ±1°
3″
381
P/E
1-20 {1.7-5.7}
SEMI Test
n-type Si:P
[111] ±0.5°
3″
570
P/P
1-10
SEMI Primet
n-type Si:Sb
[111] ±0.5°
3″
380
P/E
0.019-0.026
SEMI Prime, in Empak cassettes [...]
2019-03-06meta-author
PAM-XIAMEN can supply you with 4H-SiC wafers fitting your demands, specifications as found in https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.html.
The control of a single crystal form during the growth process of SiC crystals is a complex problem, involving the selection of multiple growth parameters and the optimization of temperature field [...]
2024-04-17meta-author
PAM XIAMEN offers 2″ FZ Silicon Ingot with Diameter 50mm
Silicon ingot, per SEMI, G Ø50mm
FZ n-type Si:P[100]±2.0°,
Ro=(1,500-7,000)Ohmcm
Ground Ingot, NO Flats,
MCC Lifetime>1000µs,
Oxygen<1E16/cc, Carbon<1E16/cc,
Adequately packed, CofC: present.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-05-27meta-author
PAM XIAMEN offers 3″ Prime Silicon Wafer Thickness 375um.
Si wafers
dia= 75mm, thickness= 375 um
orientation (100), doping Borum (B),
Double dide polishing ( epi-polished)
p-type, resistance 0,001 Ohm/cm= 25 pcs
p-type, resistance 12 Ohm/cm= 25 pcs
p-type, resistance 10 000 Ohm/cm= 25 [...]
2019-07-01meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author