PAM-XIAMEN can provide a series products of terahertz chip: Power Amplifier (PA) Chip, Low Noise Amplifier (LNA) Chip, PIN/FET Switch, Zero Bias Detector Chip, Amplification Frequency Multiplication Chain (AMC) Chip, MIXER Chip, Schottky Frequency Multiplication MMIC, Schottky Mixing MMIC, and Attenuator Chip. The terahertz chip is a brand-new microchip, a [...]
2021-07-16meta-author
The SiC substrate and SiC homoepitaxy from PAM-XIAMEN can be provided for the fabrication of MOSFET devices. Silicon carbide (SiC) MOSFET structure is mainly manufactured by imitating the process of Si MOSFET structure. In terms of configuration, MOSFET structures are generally divided into two [...]
2022-04-11meta-author
Gallium nitride semiconductors
GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now.
Gallium nitride is the future of microwave power amps, GaAs has exceeded its [...]
PAM XIAMEN offers 6″ FZ Silicon Ignot.
6″ Silicon Ingot
FY37b. 11.817Kg Silicon ingot, per SEMI,
G 150.7±0.3mmØ,
FZ Intrinsic undoped Si:-[100]±2.0°,
Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
Length: 286mm
For more information, please visit our website: [...]
2019-07-03meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/P
1-100
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
525
P/E
0.3-0.5
SEMI
n-type Si:P
[100]
4″
300
P/E
0.29-0.31
SEMI Prime
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Not sealed both sides scratched
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Both sides with scratches
n-type Si:P
[100]
4″
200
P/E
0.10-0.15
SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb
[100]
4″
525
P/E
0.020-0.022
Prime
n-type Si:Sb
[100-6° towards[110]] ±0.5°
4″
525
P/E
0.015-0.020
SEMI Prime
n-type Si:Sb
[100]
4″
525
P/E
0.011-0.014
Prime
n-type Si:Sb
[100]
4″
305 ±3
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime, TTV<5μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime
n-type Si:As
[100]
4″
525
P/E
0.0025-0.0035
SEMI Prime
n-type [...]
2019-03-05meta-author
PAM XIAMEN offers 6″FZ Silicon Wafer-1
Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author