AX-type defects in zinc-doped GaAs(1−x)P(x) on GaAs
GaAsP alloys are potential candidates for ∼ 1.5 to 1.8 eV photovoltaic converters in multijunction solar cells. We use thermally stimulated capacitance, deep level transient spectroscopy, and photocapacitance to characterize defects in p-type GaAs0.83P0.17 and GaAs0.72P0.28 grown lattice-mismatched [...]
2012-12-04meta-author
Silicon transient voltage suppressor (TVS) is one of silicon diodes, and has extremely fast response speed (less than 1ns) and relatively high surge current absorption ability, and can be used to protect equipment or circuits, even integrated circuits, MOS devices, hybrid circuits, and other voltage sensitive semiconductor [...]
2023-09-01meta-author
P Type GaN Template
PAM-XIAMEN Offers p type GaN Template
Published on December,27, 2012
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.
“Now we can offer wide range [...]
2012-12-27meta-author
PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-12-30meta-author
Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 1
0.0 ± 1.0°
1 – 100 Ohmcm
100 ± 0.3 mm
302 ± 4 µm
35
4
35
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 0,50
90 ± 5.0 °, [...]
2019-02-25meta-author
