PAM XIAMEN offers 2.5″ PBN Heater
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2.5″ PBN Heater.
1. Resistance: 22-35 ohm
2. Voltage: 180 V
3. Current: 15 A
4. Power: 2000 W
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Highly Oriented Pyrolytic Graphite. HOPG, is a relatively new form of high purity carbon and provides microscopists with a renewable and smooth surface. Unlike mica, HOPG is completely non-polar, and for samples where elemental analysis will also be done, it provides [...]
Sales of semiconductors: present and next future of the global market “Softening demand and lingering macroeconomic challenges continued to limit global semiconductor sales in November. Despite these headwinds, the industry may narrowly surpass total annual sales from 2014 and is projected to post modest sales [...]
At present, gallium nitride (GaN) technology is no longer limited to power applications, and its advantages are also infiltrating into all corners of the RF/microwave industry, and the impact on the RF/microwave industry is growing, and should not be underestimated, because it can be [...]
PAM XIAMEN offers 3″ Silicon Wafer-18 Si wafer Orientation: (100) ± 0.5° Type: n-type Dopant: P Diameter: 76.2 ± 0.3 mm Thickness: 380 ± 25 um Disorientation: 4° to <110> Resistivity: < 0.005 Ohm*cm single side polished For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm. Brand: PAM-XIAMEN Wavelength: 880nm Filling Factor: 30% Output Power: 80W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., [...]
Highlights • The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator. • The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device. • The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures. Abstract The metal-oxide-semiconductor [...]