2.5″ PBN Heater

2.5″ PBN Heater

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3″ Silicon Wafer-16

PAM XIAMEN offers 3″ Silicon Wafer-16 as follows, while silicon wafer list includes, but not limited to the following. 3″ Si wafer, R≤100Ωcm 1. Diameter: 76.2 ± 0.1mm 2. The type of alloying: P/type boron 3. Orientation (111) ±0.5º 4. Disorientation 4°±0.5º to <110> direction 5. Resistivity: ≤100Ωcm 6. Primary surface: [...]

2019-11-20meta-author
3″ Silicon Wafer-8

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111-5° towards[110]] ±0.25° 3″ 1000 P/E >5 SEMI Prime, in hard cassettes of 6, 6 & 7 wafers n-type Si:P [111-5° towards[110]] ±0.25° 3″ 1300 P/E >5 SEMI Prime, hard cst n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 E/E >5 SEMI, LaserMark, in opened hard cast n-type Si:P [111-2.5°] ±0.5° 3″ 380 P/E 1-3 SEMI Prime n-type Si:P [111] ±0.5° 3″ 380 P/E 1-10 SEMI Primet n-type Si:P [111-3.0°] ±1° 3″ 381 P/E 1-20 {1.7-5.7} SEMI Test n-type Si:P [111] ±0.5° 3″ 570 P/P 1-10 SEMI Primet n-type Si:Sb [111] ±0.5° 3″ 380 P/E 0.019-0.026 SEMI Prime, in Empak cassettes [...]

2019-03-06meta-author
4″ Silicon Wafer-5

PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [100] 4″ 800 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 525 P/E FZ >22,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 300 P/E FZ 20,000-40,000 SEMI, TTV<5μm Intrinsic Si:- [111] ±0.5° 4″ 450 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 500 P/E FZ >20,000 SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers Intrinsic Si:- [111] ±1.0° 4″ 500 P/P FZ >15,000 SEMI Prime, TTV<5μm p-type Si:B [110] ±0.25° 4″ 525 P/E 5-10 SEMI [...]

2019-03-05meta-author
AlGaN Template on Sapphire or Silicon

PAM XIAMEN offers AlGaN Template on Sapphire or Silicon Substrate. AlGaN (Aluminum Gallium Nitride) is a direct bandgap ternary semiconductor alloy material, and its band gap at room temperature can vary continuously from 3.4eV to 6.2eV depending on the composition of Al. The large [...]

2019-04-26meta-author
850nm and 940nm infrared LED wafer

PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]

2020-05-14meta-author
Pyrolytic Boron Nitride

PAM XIAMEN offers Pyrolytic Boron Nitride. Performance PBN’s properties, its intrinsic purity, superior mechanical strength, and thermal stability make it a superb choice for high temperature furnace and electrical components; microwave and semiconductor components; and industry standardized crucibles for Gallium Arsenide Crystal production. Good [...]

2019-05-14meta-author