PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111] ±0.5°
3″
415 ±15
E/E
FZ 2,000-5,000
SEMI Prime, Lifetime>1,500μs
n-type Si:P
[111] ±1°
3″
508
E/E
FZ 182-196
SEMI Test, TTV<3μm
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
300
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Test, unpolished side has stain
Intrinsic Si:-
[100]
3″
380
P/E
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime
Intrinsic Si:-
[100]
3″
500
P/P
FZ >20,000
SEMI Prime, Front Side Prime, back side Test
Intrinsic Si:-
[100]
3″
650
P/P
FZ >10,000
SEMI Prime, with LM, TTV<2μm
Intrinsic Si:-
[100]
3″
700
P/P
FZ >10,000
Test, scratrches and stains. [...]
2019-03-06meta-author
Highlights
•Elaboration of a smooth 3C–SiC membrane on a SiC substrate.
•Faceted surface for the (110) orientation but smoother for the (111) orientation.
•Roughness of the 3C–SiC membrane limited to 9 nm for the (111) orientation.
•New MEMS devices feasible.
•The huge SiC properties could be entirely exploited.
The cubic [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 80+1mm.
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity>30000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, please visit our website: https://www.powerwaywafer.com, [...]
2019-07-03meta-author
PAM XIAMEN offers (100) orientation Silicon Substrates.
Below is just a small selection. Let us know if you can use or if we can quote you on another spec.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2973
n-type Si:P
[100]
4″
500
P/P
FZ 198-200
SEMI Prime, 2Flats, Empak cst
PAM2974
n-type Si:P
[100-6°] ±0.5°
4″
325
P/P
FZ 1-10
SEMI Prime, 2Flats, Empak cst
PAM2975
Intrinsic Si:-
[100]
4″
300
P/P
FZ >20,000
SEMI Prime, 1Flat, [...]
2019-02-22meta-author
PAM XIAMEN offers 4″CZ Prime Silicon Wafer-12
4″ CZ wafer, N type
Orientation: (100)±0.5
Type/Dopant: n/phosphorus
Resistivity: 1-5 Ω-cm
Diameter: 100 mm
Thickness: 525 ± 25 μm
Surface: P/E
Source: Prolog
SEMI Prime, 1Flat, hard cst
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-04-23meta-author
150mm 4H n-type SiC epi wafer with excellent uniformity and extremely low defect density is available. SiC epitaxial wafer refers to a silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a silicon [...]
2020-03-10meta-author