Q: Please let us know if you could supply below wafer, qty 25/50/300.
Gallium Arsenide wafers, P/P
150.00±0.25 mm) 6″Ø×650±25µm,
VGF SI undoped GaAs:-[100-2.0°towards[110]]±0.5°,
u > 4,000cm²/Vs,
Both-sides-polished, 1 Flat 57.5±2.5 mm @ 110±°1,
TTV<7µm, BOW<4µm, Warp<10µm, TIR<6µm,
Certificate: obligatory, Sealed under nitrogen in single wafer cassette
A: Yes, will check the [...]
2018-09-13meta-author
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs?
A:Yes, we can offer 850nm or 620nm for 4” size.
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide?
A: Sure.
2018-06-19meta-author
Q:Do these 2” PSS LED wafers have the same epi-stack as the 4” PSS? If not, please send me the diagram with thicknesses. Wavelength can be same: central 455nm
A: the 2″ detail layer thickness and structure is same as 4″, no any difference. Wavelength:455nm+/-5nm [...]
2018-06-19meta-author
Q:We want to know the refractive index of these SiC wafers?
A:The refractive index is no=2.707, ne=2.755
2018-06-19meta-author
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]