Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs?
A:Yes, we can offer 850nm or 620nm for 4” size.
Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs?
A:Yes, we can offer 850nm or 620nm for 4” size.
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
The InGaAsP material epitaxially grown on the InP substrate is an important material for the fabrication of optoelectronic and microwave devices. The emission wavelength of InGaAsP / InP laser structure covers 1.0-1.7μm, covering two low-loss windows of 1.3μm and 1.55μm for silica fiber communication. [...]
Q:In your web site, the picture of the SiC wafer does not look like regular, transparent-light green color SiC wafer. Why is that? A: Good question, the picture in website is Polarized light image.In regular, it is green color or grey color.
Q: What is the minimum batch size for blue LED wafers on 4 inch sapphire (patterned sapphire)? A:5pcs is ok, but the price would be higher.
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
PAM-XIAMEN can supply GaAs wafer with EPD less than 5000/cm2. Q: Could you please advise guaranteed EPD for below substrate and epi? Gallium Arsenide wafers, P/E 2″Ø×380±25µm, LEC SI undoped GaAs:-[100]±0.5°, n-type Ro=(0.8E8-0.9E8)Ohmcm, One-side-polished, back-side matte etched, 2 Flats, LT-GaAs EPI: 1-2µm, Resistivity >1E7 Ohm-cm, Carrier [...]