Q:Can you supply 4″ AlGaAs epi wafers for IR LEDs?
A:Yes, we can offer 850nm or 620nm for 4” size.
Related Posts
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare the two directly?
Q We actually want to check our reflectance (mirror type) measurement method on an LED structure on a PSS wafer. Would it be possible to get the same LED structure on both a PSS wafer and a single-side polished wafer so we can compare [...]
2018-06-19meta-author
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves?
Q:Our application is for microwave annealing. Therefore, the silicon carbide must be able to absorb microwaves? A:Since the dielectric constant of 6H and 4H are large, so if SiC wafer is as absorbing materials, mainly to achieve through the structure design of Electromagnetic match.I don’t [...]
2018-06-19meta-author
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between wafers in one pack as well as the uniformity in one wafer. No metal contact would be perfect as we will employ high temperature process in our application. Do you offer the wafer dicing service as well?
Q:Our application will be making micro-pillar arrays based on the MQWs for high brightness LEDs and its wavelength tuning. So we do not really care the emission wavelength you provide but we will mind whether the process and emission wavelength would be consist between [...]
2018-06-19meta-author
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC?
Q:I was wondering if you carried any semi-insulating(not doped)SiC or single crystal HPSI SiC? A: For our semi-insulating SiC substrate, it is V doped, we can not offer High Purity semi-insulating SiC, however we can offer undoped SiC if your quantity is good.
2018-06-19meta-author
2″ LT-GaAs Wafer
Q: We would like to buy LT-GaAs, could you please recommend the specs that suit for the application? A: 2″ LT-GaAs Wafer Specification: Diamater(mm)Ф 50.8mm ± 1mm Thickness 1-2um Marco Defect Density≤ 5 cm-2 Resistivity(300K) >10^8 Ohm-cm Carrier lifetime＜1ps or 15ps Dislocation Density<1×10^6cm-2 Useable Surface Area≥80% Polishing:Single side polished Substrate:GaAs substrate
2018-07-25meta-author
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing?
Q:Can you offer SiC mono crystal material with high Thermal Conductivity > 490 W/mK, wafers with thickness: 300-1000um for semiconductor devices heat sinks manufacturing? A: Thermal Conductivity> 490 W/mK is theory value of SiC mono, however we tested some wafers, the thermal conductivity is below [...]
2018-06-19meta-author