PAM XIAMEN offers 4″ FZ silicon ignot.
Silicon ingot, per SEMI, G 100.7±0.3mmØ,
FZ Intrinsic undoped Si:-[111]±2.0°, Ro > 25,000 Ohmcm,
Ground Ingot, NO Flats,
MCC Lifetime>1000µs.
NOTE: Oxygen<1E16/cc, Carbon<1E16/cc,
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and [...]
2019-07-02meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
From the perspective of the cross-sectional structure of integrated circuits, most integrated circuits are fabricated on the shallow surface layer of the silicon base material. Due to the requirements of the manufacturing process, high requirements are placed on the dimensional accuracy, geometric accuracy, surface [...]
2022-06-13meta-author
PAM XIAMEN offers 50.8mm Si wafers.
Please send us email at sales@powerwaywafer.com if you need other specs and quantity.
Item
Material
Orient.
Diam
(mm)
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
PAM2063
p-type Si:B
[111]
2″
500
P/P
0.003–0.005
Prime, 2 Flats (2nd @ 45°), hard cst
PAM2064
p-type Si:B
[111]
2″
280
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2065
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2066
p-type Si:B
[111]
2″
1000
P/E
0.001–0.005
SEMI Prime, 1Flat, hard cst
PAM2067
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime, 1Flat, [...]
2019-02-18meta-author
Figure 1. A full InGaN structure grown on InGaN-on-sapphire (InGaNOS) substrates can span the spectrum from blue to amber. (Source: Soitec)
The advantages presented by microLED displays include low power consumption, high resolution, quick response and high luminance. In addition, sensors can be embedded within [...]
2017-10-18meta-author