PAMDPU-1000-01 is a direct current power supply unit in low ripple, low thermal drift and long- term stability. It can supply power to probe in nuclear detection field and others.
1. High Voltage Power Supply Specification
Input
AC220V/50Hz
Output
HV DC 0~500V/0~1000V; LV DC +12V/2W、-12V/1W
Alternative current
2A
Ripple voltage
10ppm (at rated [...]
2021-11-26meta-author
PAM XIAMEN offers Thermal Oxide. If you don’t see what you need then Please send us email at [email protected] if you need other specs and quantity.
Physical Constants
Constant Name
Value
Density (g/cm3)
2.27
Dielectric Constant
3.9
DC Resistivity @25°C (Ω-cm)
1016
Energy gap (eV)
~9
Thermal conductivity (W/cm2°C)
0.014
Linear expansion coefficient (ppm/°C)
0.05
Refractive index
1.46
Melting Point (°C)
~1700
Molecular weight
60.08
Molecules/cm3
2.3*1022
Specific [...]
2019-02-26meta-author
Global and China GaAs-based Device Market
Distinct from traditional silicon semiconductor, gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V semiconductor and is mainly used in handset RF front end like power amplifier (PA). In the 4G era, [...]
2012-09-29meta-author
PAM-01C2 is a hemisphere CZT based probe in a super small size. It can detect X-ray and low energy γ-ray in a high resolution.
PAM-01C2 integrated customized CZT crystal and low noise charge sensitive preamplifier circuit. It can convert X/γ-ray into exponential decay signals. Working [...]
2019-04-23meta-author
Safety Data Sheet of Indium Phosphide Wafer
Product Name:
Indium Phosphide
Date of Issue:
SDS No.:
PAM-001
2017/10/15
1.PRODUCT AND COMPANY IDENTIFICATION
Product Name: Indium Phosphide
Chemical Formula: InP Mol. Wt. 145.79
Manufacturer: Powerway Wafer Co.,Limited
Address:#506B, Henghui Business Center,No.77,Lingxia Nan Road
High Technology Zone, Huli, Xiamen,361000
2.HAZARD IDENTIFICATION
Toxic by inhalation and if swallowed.Gives rise to hazardous [...]
2020-08-04meta-author
Silicon Epi Wafers Sale
PAM XIAMEN offers Silicon Epi Wafers.
6″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
0.016
n- Si:P
0.32-0.46
n/n+
4″ Epitaxial Silicon Wafers
Item
Substrate
EPI
Comment
Size
Type
Res Ωcm
Surf.
Thick μm
Type
Res Ωcm
PAM3053
4″Øx360μm
n- Si:Sb[111]
0.005-0.020
P/E
20
n- Si:P
360 – 440
n/n+
PAM3054
4″Øx400μm
p- Si:B[111]
0.01-0.10
P/E
6.5
p- Si:B
3.6±10%
P/P/P+
22±1.5
p- Si:B
300±50
PAM3055
4″Øx525μm
p- Si:B[111]
0.01-0.02
P/E
8.1±1
p- Si:B
4.5±10%
P/P/P+
6.85±0.75
p- Si:B
0.75±0.15
PAM3056
4″Øx380μm
p- Si:B[111]
0.008-0.020
P/EOx
10.5
p- Si:B
570±10%
p/p+
PAM3057
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.15 ±10%
P/P+
PAM3058
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
20
p- Si:B
0.25±10%
P/P+
PAM3059
4″Øx525μm
p- Si:B[111]
0.001-0.005
P/E
20
p- Si:B
175±10%
P/P+
PAM3060
4″Øx440μm
p- Si:B[111]
0.008-0.020
P/E
21
p- Si:B
150 [...]
2019-02-13meta-author