Single crystal 6H-SiC MEMS fabrication based on smart-cut technique
A new single crystal silicon carbide (SiC) MEMS fabrication process is developed using a proton-implantation smart-cut technique. A 6H-SiC layer with 1.3 µm thickness has been achieved over an oxidized silicon substrate using the proposed technique. [...]
2018-08-22meta-author
Worldwide semiconductor market is expected to be slightly positive in 2016 and grow moderately in 2017. WSTS has re-calculated the Autumn 2015 forecast using the actual figures of the fourth quarter 2015. During 2016 growth is expected to be driven by sensors, micros, and [...]
2016-03-23meta-author
PAM XIAMEN offers Ti – Titanium Substrate ( Polycrystalline).
General Properties for Titanium
Symbol Ti
Atomic Number 22
Atomic Weight: 47.867
Crystal structure: HCP
Lattice constant at room temperature a: 0.295 nm
Lattice constant at room temperature b: 0.468 nm
Density: 4.506 g/cm3
Melting Point: 1668°C [...]
2019-05-10meta-author
IR Transmittance Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
PAM XIAMEN offers 2″CZ Prime Silicon Wafer
tem1, 100pcs
Silicon wafer:
i. Diameter: 50.8 mm ± 0.5 mm,
ii. Thickness: 275 μm ±25μm,
iii. Doping: P type
iv. Orientation: (100) ± 0.5°
v. TTV: ≤ 5 μm
vi. Bow and Warp: ≤ 20 μm
Growth: [...]
2020-03-25meta-author
We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more [...]