PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Polycrystallline Zr substrate
Purity: 99.5%
Density: 6.52 g/cm3
Melting Point: 1855ºC
Average Grain Size: 10~50 Microns ( No annealling )
Substrate dimension: 10 x 10 x0.5 [...]
2019-05-21meta-author
PAM XIAMEN offers Silicon Wafer Thickness:1000μm.
Silicon Wafer ,6in Si Wafer,P/Boron <111> ON +-1°,
0.01-0.02 Ohm-cm, Thickness 1000μm, SSP,
PRIME -Si Wafers, Single SidePolished/Etched Back,
Primary Semi Std Flat,
Surface Roughness <1nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [...]
2019-08-22meta-author
PAM XIAMEN offers 4″ FZ N type Si wafer, which can be used for research on silicon quantum devices.
GQ23b Silicon wafers, per SEMI Prime, P/P
4″Ø×525±10μm,
FZ n-type Si:P
[100]±0.5°,
Ro=(7,000-10,000)Ohmcm,
TTV<5μm, Bow<30μm, Warp<30μm,
Both-sides-polished,
SEMI Flat one: Length 32.5±2mm @ 110,
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, [...]
2021-03-19meta-author
PAM-XIAMEN can offer SiC substrate and epitaxy wafer for fabricating IGBT devices. The emergence of the third-generation wide-bandgap semiconductor SiC wafer has shown stronger competitiveness in the fields of high voltage, high temperature, and high power. The n-IGBT (insulated gate bipolar transistor) is further [...]
2022-04-14meta-author
PAM XIAMEN offers Bi12GeO20 (BGO20).
Bi12GeO20 – BGO20 (001) 10x5x1.0 mm 1 side polished
Features:
Crystal Bi12GeO20 ( BGO20) — New generation acousto-optic crystal Wafer size: 10 x 5 x1.0 mm thick
Orientation: (001) +/-0.5o
Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
1 sides polished
Package: Each wafer is packed in [...]
2019-04-17meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author