IV Test Report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by non-contact [...]
2018-08-14meta-author
Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions
We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of [...]
Indium antimonide (InSb) detector is sensitive for the mid-wave infrared (MWIR) band. In terms of mid-infrared detection in the 3-5um band, due to the advantages of mature material technology, high sensitivity and good stability, InSb detectors stand out from detectors based on other materials. [...]
2022-04-06meta-author
Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko
Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
2017-09-18meta-author
As a leading manufacturer of semiconductor materials, PAM-XIAMEN aims to supply high quality semiconductor wafers including substrate and epitaxy of SiC, GaN, GaAs and other materials, supporting scientists and engineers around the world to develop and innovate technology. Please view https://www.powerwaywafer.com/products.html for more wafers.
The list [...]
2022-08-26meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
