A Plane Si-GaN Freestanding GaN Substrate

  • Home
  • News
  • A Plane Si-GaN Freestanding GaN Substrate

A Plane Si-GaN Freestanding GaN Substrate

PAM-XIAMEN offers A Plane Si-GaN Freestanding GaN Substrate

Item PAM-FS-GAN A-SI
Dimension 5 x 10 mm2
Thickness 380+/-50um
Orientation A plane (11-20) off angle toward M-axis 0 ±0.5°

A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type Semi-Insulating
Resistivity (300K) > 10 6Ω·cm
TTV ≤ 10 µm
BOW  BOW ≤ 10 µm
Surface Roughness: Front side: Ra<0.2nm, epi-ready;

Back side: Fine Ground or polished.
Dislocation Density ≤ 5 x 106 cm-2
Macro Defect Density 0 cm-2
Useable Area > 90% (edge exclusion)
Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

2020-08-17

Share this post

Related Posts

50.8mm (2 Inch) Silicon Wafers-2

PAM XIAMEN offers 50.8mm Si wafers. Please send us email at sales@powerwaywafer.com  if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2005 Intrinsic Si:- [100] 2″ 280 ±10 P/E FZ >8,500 SEMI Prime, 1Flat, TTV<5μm, hard cst PAM2006 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, hard cst PAM2007 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, in hard cassettes of 2 & 5 wafers PAM2008 Intrinsic Si:- [111] [...]

2019-02-18meta-author
GaN on Si for Power, E-mode

PAM XIAMEN offers GaN on Si for Power, E-mode. 1.1 E-MODE GaN HEMT Structure on Silicon Wafer size 2″, 4″, 6″,8″ AlGaN/GaN HEMT structure Refer 1.2 Residual 2DEG density (Vg=0 V) <1e18/cm3 AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=30um Edge exclusion  <5mm p-GaN / u-GaN cap layer  / Al composition 20-30% AlGaN barrier layer  / GaN channel / AlGaN buffer / Substrate material Silicon substrate Si wafer thickness (μm) 675um(2″), [...]

2019-05-17meta-author
6″CZ Prime Silicon Wafer-3

6″CZ Prime Silicon Wafer-3 PAM XIAMEN offers 6″CZ Prime Silicon Wafer with orientation (111) In materials science, when discussing the growth of crystals, the position of atoms in crystals, the direction of atomic rows and the plane of atoms are often involved. We call the crystal [...]

2020-06-15meta-author
BaF2 crystal substrate

PAM XIAMEN offers high-quality BaF2 crystal substrate. BaF2 is an excellent Infrared crystal and Scintillating crystal.  PAM XIAMEN supplies BaF2 crystal substrate, window and blank for all IR applications. Xtl Structure  Lattice (A)  Melting Point  Density g/cm3  Hardness  Thermal Expansion  Refractive index  Cubic  6.196  1354 oC 4.88  3 (mohs)  18.1×10-6 / oC)  ho 1.47443 BaF2, (100), 10x10x 0.5 mm, 2 sides polished BaF2, (100), 10x10x 1.0 mm, [...]

2019-04-16meta-author
Medium-energy ion irradiation of Si and Ge wafers: studies of surface nanopatterning and signature of recrystallization in 100 keV Kr+ bombarded a-Si

We report new and exciting experimental results on ion-induced nanopatterning of a-Si and a-Ge surfaces. The crystalline Si (100) and Ge (100) wafers were amorphized and an a/c interface was developed by pre-irradiation with a 50 keV Ar+ beam at normal incidence with an [...]

2019-07-08meta-author
Si+SiO2+Pt Thin Film

PAM XIAMEN offers Si+SiO2+Pt Thin Film. Si+SiO2+Pt Thin Film SiO2+Pt thin film on Si (B-doped)substrate ,10x10x0.5mm,1sp (SiO2=500nm, Pt=60nm) Silicon Wafer Specifications: Conductive type:       SiO2+Pt thin film on Si (B-doped, (100)Ori.) substrate ,10x10x0.5mm,1sp( SiO2=500nm,Pt=60nm)   Resistivity:               [...]

2019-05-16meta-author