We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency.Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a epi wafer structure as follows
| Thickness (um) | ||||||
| Layer | Material | Mole | Mole | Type | CV Level (cm-3) | |
| Fraction (x) | Fraction (y) | |||||
| 15 | GaIn(x)As | 0.016 | 0.2 | N | >5.00e18 | |
| 14 | Al(x)InP | 0.04 | N | 5.00E+17 | ||
| 13 | GaIn(x)P | 0.1 | N | 2.00E+18 | ||
| 12 | GaIn(x)P | 0.5 | P | |||
| 11 | AlIn(x)P | 0.1 | P | |||
| 10 | Al(x)GaAs | 0.015 | P | |||
| 9 | GaAs | 0.015 | N | |||
| 8 | GaIn(x)P | 0.554 | 0.1 | N | ||
| 7 | GaIn(x)As | 0.016 | 0.1 | N | ||
| 6 | GaIn(x)As | 0.016 | 3 | P | 1-2e17 | |
| 5 | GaIn(x)P | 0.554 | 0.1 | P | 1-2e18 | |
| 4 | Al(x)GaAs | 0.4 | 0.03 | P | 5.00E+19 | |
| 3 | GaAs | 0.03 | N | 2.00E+19 | ||
| 2 | GaIn(x)As | 0.016 | 0.5 | N | 2.00E+18 | |
| 1 | GaIn(x)P | 0.554 | 0.06 | N |
We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application, please click AlGaP/GaAs Epi Wafer for Solar Cell
SOURCE:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at [email protected] or [email protected]