We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a GaInP/GaAs/Ge epi wafer structure as follows:

1. Specification of GaInP/GaAs/Ge Epi Wafer

				Thickness (um)
Layer	Material	Mole	Mole		Type	CV Level (cm-3)
		Fraction (x)	Fraction (y)
15	GaIn(x)As	0.016		0.2	N	>5.00e18
14	Al(x)InP			0.04	N	5.00E+17
13	GaIn(x)P			0.1	N	2.00E+18
12	GaIn(x)P			0.5	P
11	AlIn(x)P			0.1	P
10	Al(x)GaAs			0.015	P
9	GaAs			0.015	N
8	GaIn(x)P	0.554		0.1	N
7	GaIn(x)As	0.016		0.1	N
6	GaIn(x)As	0.016		3	P	1-2e17
5	GaIn(x)P	0.554		0.1	P	1-2e18
4	Al(x)GaAs	0.4		0.03	P	5.00E+19
3	GaAs			0.03	N	2.00E+19
2	GaIn(x)As	0.016		0.5	N	2.00E+18
1	GaIn(x)P	0.554		0.06	N

 

We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers  (AlGaAs,InGaP) grown on GaAs for solar cell application, please click AlGaP/GaAs Epi Wafer for Solar Cell

2. XRD of GaInP/GaAs/Ge Wafer

 Figures a, b show the XRD of crystalline quality of  GaInP/GaAs/Ge wafer.

a.

b.

 

SOURCE:PAM-XIAMEN

For more information, please contact us email at [email protected] and [email protected].