We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a GaInP/GaAs/Ge epi wafer structure as follows:
1. Specification of GaInP/GaAs/Ge Epi Wafer
Thickness (um) | ||||||
Layer | Material | Mole | Mole | Type | CV Level (cm-3) | |
Fraction (x) | Fraction (y) | |||||
15 | GaIn(x)As | 0.016 | 0.2 | N | >5.00e18 | |
14 | Al(x)InP | 0.04 | N | 5.00E+17 | ||
13 | GaIn(x)P | 0.1 | N | 2.00E+18 | ||
12 | GaIn(x)P | 0.5 | P | |||
11 | AlIn(x)P | 0.1 | P | |||
10 | Al(x)GaAs | 0.015 | P | |||
9 | GaAs | 0.015 | N | |||
8 | GaIn(x)P | 0.554 | 0.1 | N | ||
7 | GaIn(x)As | 0.016 | 0.1 | N | ||
6 | GaIn(x)As | 0.016 | 3 | P | 1-2e17 | |
5 | GaIn(x)P | 0.554 | 0.1 | P | 1-2e18 | |
4 | Al(x)GaAs | 0.4 | 0.03 | P | 5.00E+19 | |
3 | GaAs | 0.03 | N | 2.00E+19 | ||
2 | GaIn(x)As | 0.016 | 0.5 | N | 2.00E+18 | |
1 | GaIn(x)P | 0.554 | 0.06 | N |
We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers (AlGaAs,InGaP) grown on GaAs for solar cell application, please click InGaP/GaAs Epi Wafer for Solar Cell
2. XRD of GaInP/GaAs/Ge Wafer
Figures a, b show the XRD of crystalline quality of GaInP/GaAs/Ge wafer.
a.
b.
SOURCE:PAM-XIAMEN
For more information, please contact us email at [email protected] and [email protected].