Triple-Junction Solar Cells

Triple-Junction Solar Cells

We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency. Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a GaInP/GaAs/Ge epi wafer structure as follows:

1. Specification of GaInP/GaAs/Ge Epi Wafer

        Thickness (um)    
Layer Material Mole Mole Type CV Level (cm-3)
    Fraction (x) Fraction (y)    
15 GaIn(x)As 0.016   0.2 N >5.00e18
14 Al(x)InP     0.04 N 5.00E+17
13 GaIn(x)P     0.1 N 2.00E+18
12 GaIn(x)P     0.5 P  
11 AlIn(x)P     0.1 P  
10 Al(x)GaAs     0.015 P  
9 GaAs     0.015 N  
8 GaIn(x)P 0.554   0.1 N  
7 GaIn(x)As 0.016   0.1 N  
6 GaIn(x)As 0.016   3 P 1-2e17
5 GaIn(x)P 0.554   0.1 P 1-2e18
4 Al(x)GaAs 0.4   0.03 P 5.00E+19
3 GaAs     0.03 N 2.00E+19
2 GaIn(x)As 0.016   0.5 N 2.00E+18
1 GaIn(x)P 0.554   0.06 N  


We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers  (AlGaAs,InGaP) grown on GaAs for solar cell application, please click InGaP/GaAs Epi Wafer for Solar Cell

2. XRD of GaInP/GaAs/Ge Wafer

 Figures a, b show the XRD of crystalline quality of  GaInP/GaAs/Ge wafer.


XRD proof of crystalline quality for GaInP/GaAs/Ge Wafer


XRD proof of crystalline quality for GaInP/GaAs/Ge Wafer-2



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