Triple-junction solar cells

Triple-junction solar cells


We are running GaInP/GaAs/Ge triple-junction cells fabricated by a MOCVD technique and made of high-quality III-V compounds materials that deliver significantly high efficiency.Compared with conventional solar cells, multi-junction solar cells are more efficient but also more expensive to manufacture. Triple-junction cells are more cost effective. They are used in space applications. And now we offer a epi wafer structure as follows


    Thickness (um)  
LayerMaterialMoleMoleTypeCV Level (cm-3)
  Fraction (x)Fraction (y)  
15GaIn(x)As0.016 0.2N>5.00e18
14Al(x)InP  0.04N5.00E+17
13GaIn(x)P  0.1N2.00E+18
12GaIn(x)P  0.5P 
11AlIn(x)P  0.1P 
10Al(x)GaAs  0.015P 
9GaAs  0.015N 
8GaIn(x)P0.554 0.1N 
7GaIn(x)As0.016 0.1N 
6GaIn(x)As0.016 3P1-2e17
5GaIn(x)P0.554 0.1P1-2e18
4Al(x)GaAs0.4 0.03P5.00E+19
3GaAs  0.03N2.00E+19
2GaIn(x)As0.016 0.5N2.00E+18
1GaIn(x)P0.554 0.06N 


We also offer epi wafers of single-junction and dual-junction InGaP/GaAs solar cells,with different structures of epitaxial layers  (AlGaAs,InGaP) grown on GaAs for solar cell application, please click AlGaP/GaAs Epi Wafer for Solar Cell




For more information, please visit our website:, send us email at [email protected]  or [email protected]


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