Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer
Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had [...]
Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
PAM XIAMEN offers Silver Single Crystal & Substrate.
PAM XIAMEN grows Silver single crystal along <111> direction up to 20 mm diameter by Modified Bridgeman method. The silver single crystal substrate is cut from the Ag ingot and polished to 30A surface roughness.
PAM [...]
2019-05-08meta-author
P Type GaN Template
PAM-XIAMEN Offers p type GaN Template
Published on December,27, 2012
Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, today announces mass production of p type Mg doped GaN template.
“Now we can offer wide range [...]
2012-12-27meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author