The uncooled infrared (IR) focal plane detector is one detector that can work at room temperature without a refrigeration device, and has many advantages such as fast startup, low power consumption, small size, light weight, long life, and low cost. And the technology of [...]
2022-04-06meta-author
PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
1. Specifications of C-Plane Sapphire Substrate
2” C-plane SSP Sapphire Substrate:
No
Item
Specification
1
Material
High PurityAl2O3
2
Diameter
50.8+0.1mm
3
Thickness
430土15um
4
TTV
≤10μm
5
LTV
≤1.5μm
6
Bow
-10~0μm
7
Warp
≤10μm
8
Primary Flat Length
16.0土1.0mm
9
Front Surface Roughness(Ra)|
Ra≤0.2nm
Back Surface Roughness(Ra)
0.7~1.2μm
11
Primary Flat Orientation
A-plane土0.2°
12
Surface Orientation
C-Plane(0001)
off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis)
13
Laser Mark
back side or frontside
14
Package
25pcs/Cassette, Vacuum-sealed, Nitrogen-
[...]
2020-05-20meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
PAM-XIAMEN can offer 850nm and 940nm infrared LED wafer by MOCVD. 850nm and 940nm infrared LED refers to the infrared wavelength with the peak value of 850nm or 940nm, but there is also a small amount of light in the visible light area, so it [...]
2020-05-14meta-author
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6
Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Lifetime>1000µsec
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Orientation[110]±0.5°
Resistivity>5,000 Ωcm
TTV<10µm
Bow/Warp<40µm
Primary Flat Location@[111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat Location@[111]70.5° CW from primary flat
Front side finish [...]
2019-09-20meta-author
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1
6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm
PARAMETER
SPECIFICATION
GENERAL CHARACTERISTICS
1
Growth Method
FZ Gas Dope
2
Crystal Orientation
(100)
3
Conductivity Type
n
4
Dopant
Phosphorus
5
Nominal Edge Exclusion
6 mm
ELECTRICAL CHARACTERISTICS
6
Resistivity
2000 – 7000 Ωcm
7
Life Time
>1500 µsec
CHEMICAL CHARACTERISTICS
8
Oxygen Concentrations
< 2xE16 at/cm3
9
Carbon Concentrations
< 2xE16 at/cm3
WAFER PREPARATION CHARACTERISTICS
10
Front Surface Condition
Polished, [...]
2020-04-17meta-author