Ge substrates are recently being reconsidered as a candidate material for the replacement of Si substrates in advanced semiconductor devices. The reintroduction of this material requires reengineering of the standard IC processing steps. In this paper, we present the extension of the methodology of [...]
A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere to 1600 °C for 3 and 6 h. SiC nanowires/nanorods with diameters of 100 nm and lengths of several tens of micrometres were [...]
2019-11-15meta-author
PAM-XIAMEN offers A Plane N-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN A-N
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
A plane (11-20) off angle toward M-axis 0 ±0.5°
A plane (11-20) off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
-10 µm ≤ BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 106 cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-17meta-author
PAM XIAMEN offers Nd2Ga5O12 single crystal.
PAM XIAMEN is developing a series of doped GGG single crystal for nest generation Magneto-optical device.
Composition
(Cubic)
GGG
Gd3Ga5O12
YSGG
Y3Sc2Ga3O5
S-GGG(CaMgZr:GGG)
Gd2.6Ca0.4Ga4.1Mg0.25Zr0.65O12
NGG
Nd3Ga5O12
GYSGG
Gd0.63Y2.37Sc2Ga3O12
GSGG
Gd3Sc2Ga3O12
Lattice constant
12.376 Å
12.426 Å ,
12.480 Å
12.505Å
12.507 Å ,
12.554 Å ,
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 [...]
2019-05-14meta-author
PAM-XIAMEN can offer 4” GaAs HEMT epi wafer with 2D electron gas (2DEG) and very high electron mobility of 5-7E5 cm2/V.s, please see below typical wafers of gallium arsenide with HEMT structure:
1. GaAs HEMT Epitaxial Wafer Structures
Structure 1: 4″ AlGaAs / GaAs HEMT epi wafer (PAM200416-HEMT):
HEMT [...]
The results of GaN epitaxial crystal growth on 4° off-axis Si- and C-face 4H-SiC without buffer layers by tri-halide vapor-phase epitaxy (THVPE) with high-speed wafer rotation and the properties of the obtained material are briefly described in this paper. GaN epitaxial layers were grown [...]
2019-10-18meta-author