PAM XIAMEN offers 2″CZ Prime Silicon Wafer-4
Silicon wafer
Dia: 2”diameter
thickness: 280±25mm
Type: P-type (100)
Polished: one side polished
Resistivity1-10Ωcm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-16meta-author
PAM XIAMEN offers Coated Silicon wafer.
Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Nickel <111> Film( 100nm) Coated Si Wafer (100) P/Boron ,5x5x0.5mmSSP, R:1-20 ohm.cm
Nickel<111> Film (100nm) Coated SiO2/Si Wafer -(100) P/Boron ,10x10x0.5mmSSP, R:1-20 ohm.cm
Nickel<111> Film (100nm) [...]
2019-04-28meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
The SOS technology uses single crystal sapphire or spinel insulator material as the substrate and grows a single crystal silicon film through a high-temperature epitaxy process to fabricate semiconductor integrated circuits. It is a kind of SOI CMOS technology. The silicon on sapphire structure [...]
2019-05-16meta-author
PAM-XIAMEN, an epitaxy manufactory, provide InGaAsP/InGaAs epi on InP substrate and custom InP thin films on InP wafers for academic research in III-V photonics. The epitaxial wafer (Photodiode) consist of different InGaAs, InP and InGaAsP layers on top of a semi-insulated InP substrate as [...]
SiC wafer materials have broad bandgap, high electron saturation mobility, and excellent thermal properties, which have great application prospects in high-temperature, high-frequency, and high-power devices. The surface quality of Si surface directly affects the quality of SiC epitaxial thin film and the performance of [...]
2024-03-19meta-author