Knowledge

5-6-4-2 SiC High-Power Switching Transistors

5-6-4-2 SiC High-Power Switching Transistors Three terminal power switches that use small drive signals to control large voltages and currents (i.e., power transistors) are also critical building blocks of high-power conversion circuits. However, as of this writing, SiC high-power switching transistors are not yet commercially available for beneficial use in [...]

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5-6-5 SiC MicroElectromechanical Systems (MEMS) and Sensors

5-6-5 SiC MicroElectromechanical Systems (MEMS) and Sensors As described in Hesketh’s chapter on micromachining in this book, the development and use of siliconbased MEMS continues to expand. While the previous sections of this chapter have centered on the use of SiC for traditional semiconductor electronic devices, SiC is also expected [...]

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5-7 Future of SiC

5-7 Future of SiC It can be safely predicted that SiC will never displace silicon as the dominant semiconductor used for the manufacture of the vast majority of the world’s electronic chips that are primarily low-voltage digital and analog chips targeted for operation in normal human environments (computers, cell phones, [...]

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5-7-1 Future Tied to Material Issues

5-7-1 Future Tied to Material Issues The previous sections of this chapter have already highlighted major known technical obstacles and immaturities that are largely responsible for hindered SiC device capability. In the most general terms, these obstacles boil down to a handful of key fundamental material issues. The rate at [...]

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3-1. Large Point Defects

3-1. Large Point Defects Defects which exhibit a clear shape to the unassisted eye and are > 50 microns across. These features include spikes, adherent particles, chips and craters. Large point defects less than 3 mm apart count as one defect.

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3-2. Scratches

3-2. Scratches Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1. Scratches are speci ed by the number of discrete scratches times the total length in fractional diameter.  

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3-3. Dimpling

3-3. Dimpling A texture resembling the surface of a golf ball. Speci ed in % affected area.

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3-4. Step Bunching

3-4. Step Bunching Step bunching is visible as a pattern of parallel lines running perpendicular to the major  at. If present, estimate the % of speci ed area affected.  

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3-5. Backside Cleanliness

3-5. Backside Cleanliness Veri ed by inspecting for a uniform color to the wafer backside. Note there is a darker region near the center of some higher doped wafers. Backside cleanliness speci ed as percent area clean.  

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