News

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry

GaN Power Electronics will top one billion dollar in revenue in a couple of years thanks to a cross-fertilization with the LED industry SLOW RAMP-UP BUT HUGE EXPECTATIONS The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies are selling products on the open market. [...]

2012-07-11 Read more...

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates

PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″ size native semi-insulating GaN (SI GaN) substrates,which is on mass production in 2011. This new product represents a natural addition [...]

2012-07-09 Read more...

Gallium nitride semiconductors

Gallium nitride semiconductors GaN is a compound semiconductor on steroids! if you could make a 10 Watt part on GaAs at a particular frequency, you can probably make a 100 watt part on GaN right now. Gallium nitride is the future of microwave power amps, GaAs has exceeded its half-life, you can quote us [...]

2012-07-04 Read more...

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd

Welcome to our Semiconductor Wafer Maker Member – Xiamen Powerway Advanced Material Co.,Ltd Powerway wafer develops and manufactures wafers with Gallium Arsenide (GaAs), Gallium Nitride (GaN) technologies advanced high-performance RF solutions  for customers worldwide. We are a leading semiconductor wafer in market serving customers in mobile devices,3G and 4G base station,WLAN,WiMAX,GPS,defense and aerospace markets. We have GaAs foundry for wafer fabrication and support services. Our [...]

2012-06-20 Read more...

THz Generation Process in LT-GaAs

THz Generation Process in LT-GaAs   Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a [...]

2012-06-18 , Read more...

Lextar lights up 6-inch LED wafer

LED manufacturer Lextar Electronics claims to be the first LED maker in Taiwan to demonstrate blue-light emission from a processed 6-inch-diameter LED wafer. (more…)

2012-05-21 Read more...

LED MR16 Lamp Made by GaN on GaN Technology

Soraa, the world’s leading developer of GaN on GaN （ gallium nitride on gallium nitride ） – solid state lighting technology, announced the launch of its flagship product, the Soraa LED MR16 lamp. The new product is the first LED lamp to provide superior performance to a traditional halogen MR16. It [...]

2012-05-21 Read more...

What is GaN？

GaN(Gallium nitride), which is a compound semiconductor,it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about halfthat of the GaAs. GaN is Non-Toxic. Basic Parameters for Wurtzite crystal structure at 300K: Breakdown field ~5 x 106 V cm-1 Mobility electrons =< 1000 cm2 V-1 s-1 Mobility holes =< 200 cm2 V-1 s-1 Diffusion coefficient electrons 25 cm2 s-1 Diffusion coefficient holes 5 cm2 s-1 Diffusion [...]

2012-05-21 Read more...