Performance of Terahertz Photoconductive Antennas

Performance of Terahertz Photoconductive Antennas

PAM XIAMEN offers 150-μm-gapped THz photoconductive antenna.

The types of terahertz photoconductive antennas prepared includes diope antenna,strip line antenna, bow-tie antenna and antenna array with different parameters. The antenna gaps are from 2 μm to 1 mm, and we also can make the antennas designed by the customers. The most commonly used antennas are with the gap of 100μm, 150μm and 200μm. The antennas have been installed on antenna mounts and can be connected with a bias source easily. The following table lists the main parameters of a 150-μm-gapped antenna.

Performance of a 150-μm-gapped THz photoconductive antenna

Item Parameter
Breakdown E-field (kV/cm) > 20
Average output power (mW) > 1 mW (@200V bias voltage)
Spectral rage (THz) 0.1-3.0
Signal-to-Noise Ratio > 10000 (@RH=60%)
Signal-to-Noise Ratio > 20000 (@Dry N2 purged)
Stability of THz peak power < 0.1% (@100 mins testing)


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Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.


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