CZT Semiconductor Wafer

CdZnTe Wafer Substrate-Cadmium Zinc Telluride
Quantity	Material	Orientation.	Size	Thickness	Polish	Resistivity	Type Dopant	FWHM
PCS	Material	Orientation.	(mm)	(μm)	Polish	Ω·cm
1-100	CdZnTe	N/A	10×10	1000	DSP	>1E10	N	@59.5keV<7%
1-100	CdZnTe	N/A	10×10	2000	DSP	>1E10	N	@59.5keV<7%
1-100	CdZnTe	(111)	10×10	500	SSP	N/A	P	N/A
1-100	CdZnTe	(211)B	10X10	800	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	10X10	500	lapping	N/A	N/A	N/A
1-100	CdZnTe	N/A	10X10	500	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	20X20	800	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	20×20	5000	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	20×20	2000	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	20×20	3000	DSP	N/A	N/A	N/A
1-100	CdZnTe	N/A	3X3	2000	DSP	N/A	N/A	N/A

As a CZT semiconductor wafer supplier,we offer CZT semiconductor wafer list for your reference, if you need price detail, please contact our sales team

Note:

*** As manufacturer, we also accept small quantity for researcher or foundry.

***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.

2017-06-02 CZT Semiconductor Wafer

LNOI with Metal Electrode

Lithium Niobate(LNOI) with Metal Electrode There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric [...]

2018-08-22meta-author

Substrates for III-V Nitride Film Deposition

Substrates for III-V nitride Film Deposition Crystal Structure M.P. Density Lattice Mis-match to GaN Thermal Expansion Growth Tech. .& Max size Standard substrate size (mm) oC g/cm3 (10-6/k) SiC (6H as example) Hexagonal ~2700 3.21 3.5 % atori. 10.3 CVD Ø2″ x 0.3,Ø3″x0.3 a=3.073 Å 20x20x0.3,15x15x0.3 c=15.117 Å Ø3“ 10x10x0.3,5x5x0.3 subl. 1 side epi polished Al2O3 Hexagonal 2030 3.97 14% atori. 7.5 CZ Ø50 x 0.33 a=4.758 Å Ø25 x 0.50 c=12.99 Å Ø2” 10x10x0.5 1 or 2 sides epi polished LiAlO2 Tetragonal 1900 ~ 2.62 1.4 % atori. / CZ 10x10x0.5 a=5.17 Å Ø20 [...]

2018-07-10meta-author

Ge Wafer Supplier

Ge Wafer Substrate-Germanium No. Material Orientation. Diameter Thickness Polish Resistivity Type Dopant Prime flat EPD Ra (mm) (μm) Ω·cm Orientation /cm2 1-100 Ge (100) 50.8 500±25 SSP 0.0138-0.02 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500 SSP ≥30 N/undoped N/A N/A <5A 1-100 Ge (100) 50.8 500 SSP 58.4-63.4 N/undoped N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-1 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 500 SSP 0.1-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 50.8 1000 DSP >30 N/A (110) N/A N/A 1-100 Ge (100) 50.8 2000 SSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 4000 SSP N/A N/A N/A N/A N/A 1-100 Ge (111)/(110) 50.8 200000 N/A 5-20 N/A N/A N/A N/A 1-100 Ge (100) 50.8 400 SSP <0.4 N/A N/A N/A N/A 1-100 Ge (100)/(111) 50.8 4000±10 DSP N/A N/A N/A N/A N/A 1-100 Ge (100) 50.8 350 SSP 1-10 P/Ga (110) ≤5000 N/A PAMP20295 Ge (100) 50.8 500±25 SSP 2-10 P/Ga (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 N/Sb (110) ≤5000 N/A 1-100 Ge (100) 50.8 500±25 SSP 0.3-3 P/Ga (110) ≤5000 N/A 1-100 Ge (111) 60 1000 As cut >30 N/A (110) <3000 N/A 1-100 Ge (100) 100 N/A SSP <0.019 P/Ga (110) <500 N/A 1-100 Ge (100) 100 1000±25 SSP ≥30 N/undoped N/A N/A N/A 1-100 Ge (100) off 6°or off 9° 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP 0.01-0.05 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP <0.01 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 DSP ≥35 P/Ga N/A N/A N/A 1-100 Ge (100) 100 500 SSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100) 100 500 DSP 0.1-0.05 P/Ga N/A N/A <5A 1-100 Ge (100)6°off (111) 100 185±15 DSP 0.01-0.05 N/A (110) ≤5000 <5A 1-100 Ge (100)6°off (110) 100 525±25 SSP 0.01-0.04 N/A N/A N/A N/A 1-100 Ge (100) 100 N/A N/A N/A N/A N/A N/A N/A 1-100 Ge (100) 100 1000±15 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 750±25 SSP ≥30 N/A (110) ≤5000 N/A 1-100 Ge (100) 100 500±25 SSP 10-30 N/A N/A N/A N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <500 N/A 1-100 Ge (100)/(111) 100 160 DSP 0.05-0.1 N/Sb N/A <4000 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <500 N/A 1-100 Ge (100)/(111) 100 190 DSP 0.05-0.1 P/Ga N/A <4000 N/A 1-100 Ge (111) 100 500±25 SSP <0.4 N/Sb N/A N/A N/A 1-100 Ge (100)6°off-cut toward(111)A 100 175±25 SSP 0.003-0.009 P/Ga (0-1-1) (0-11) <100 N/A PAM210802 Ge (100) 100 175 DSP <0.02 P N/A N/A N/A 1-100 Ge (310)±0.1° 100 200±15 DSP >20 N/A N/A N/A N/A 1-100 Ge (111) 150 600-700 N/A >30 N/A (110) N/A N/A Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial [...]

2018-05-23meta-author Ge Wafer Supplier

Superconductor Substrates

Superconductor Substrates Crystal Structure M.P. Density Thermal Expansion Dielectric constant Growth Tech. & max. size standard 1or 2 sides epi polished wafer oC g/ cm3 LSAT Cubic 1840 6.74 10 22 CZ 20x20x0.5mm (LaAlO3)0.3 -(Sr2AlTaO8)0.7 a=3.868 Å Ø35mm 10x10x0.5mm LaAlO3 Rhombo. 2100 6.51 9.2 24.5 CZ Ø3″x0.5mm a=3.790 Å Ø3″ Ø2″x0.5mm c=13.11 Å Ø1″x0.5mm 10x10x0.5mm MgO Cubic 2852 3.58 12.8 9.8 Flux Ø2″x0.5mm a=4.21 Å Ø2″ 10x10x0.5mm NdGaO3 Orthor. 1600 7.57 7.8 25 CZ Ø2″x0.5mm a=5.43 Å Ø2″ 10x10x0.5mm b=5.50 Å c=7.71 Å SrTiO3 Cubic 2080 5.12 10.4 300 vernuil 10x10x0.5mm a=3.90 Å Ø30mm SrLaAlO4 Tetrag. 1650 16.8 CZ 10x10x0.5mm a=3.756 Å Ø20mm c=12.63 Å YAlO3 Orthor. 1870 4.88 2 ~ 10 16`20 CZ 10x10x0.5mm a=5.176 Å b=5.307 Å Ø30mm c=7.355 Å YSZ Cubic ~2500 5.8 10.3 27 Flux Ø2″x0.5mm a=5.125 Å Ø2″ 10x10x0.5m

2018-07-10meta-author

Ultra Flat Wafer Ultra Thin Wafer

Ultra Flat Wafer Ultra Thin Wafer We improve wafer thickness uniformity (TTV) through wafer thinning services and chemical mechanical polishing (CMP) services, which transfer wafers (such as LN, LT, silicon and quartz) to ultra-flat or ultra-thin wafers. We can produce ultra-flat silicon wafers, ultra-flat quartz wafers, ultra-thin LN wafers, ultra-thin [...]

2018-08-22meta-author

Other Wafers

Other Wafers ZnO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 ZnO (0001) 10×10 1000 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 1000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (10-10) 10×10 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10×10 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 10X15 300 SSP N/A undoped none N/A <0.5 1-100 ZnO N/A 14X14 1000 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 15X15 300 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 1000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 As cut N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 3000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 25.4×25.4 2000 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5×5 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5X5 500 DSP N/A undoped none N/A <0.5 1-100 ZnO (0001) 5X5 500 SSP N/A undoped none N/A <0.5 1-100 ZnO (11-20) 5X5 500 SSP N/A undoped none N/A <0.5 As a ZnO semiconductor wafer supplier, we offer ZnO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. MgO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 MgO (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (111) 10×10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 1000 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 MgO (100) 10×10 500 DSP N/A N/A N/A N/A <0.5 As a MgO semiconductor wafer supplier,we offer MgO semiconductor wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. YSZ Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 YSZ (100) 25.4 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 200 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 400 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 300 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 25.4 200 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 10×10 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (111) 10×10 500 DSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 10×10 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 20×20 500 SSP N/A N/A N/A N/A <0.5 1-100 YSZ (100) 30×30 500 SSP N/A N/A N/A N/A <0.5 As a YSZ wafer supplier,we offer YSZ wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. STO Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 STO (100) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 STO (111) 10X10 500 SSP N/A N/A N/A N/A <0.5 As a STO wafer supplier,we offer STO wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. LSAT Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime flat EPD Ra PCS (mm) (μm) Ω·cm Orientation /cm2 nm 1-100 LSAT (100) 50.8 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (100) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (110) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (111) 10X10 500 SSP N/A N/A N/A N/A <0.5 1-100 LSAT (100) 10X10 2000 SSP N/A N/A N/A N/A <0.5 As a LSAT wafer supplier,we offer LSAT wafer list for your reference, if you need price detail, please contact our sales team Note: *** As manufacturer, we also accept small quantity for researcher or foundry. ***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon. TiO2 Wafer Quantity Material Orientation. Size Thickness Polish Resistivity Type Dopant Prime [...]

2017-05-23meta-author other wafers

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
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Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
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Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
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CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
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Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

CZT Semiconductor Wafer

CZT Semiconductor Wafer