The single crystal germanium is n type at room temperature, and the resistivity shows non-single dependence on temperature. When conduction type transits from n type to p type, the bulk germanium resistivity is in maximum, and the carrier mobility is declining. With the increasing [...]
2021-11-10meta-author
PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer SSP
4″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers 3″ Silicon Wafer-14
3″ Si wafer(32849), R≥200Ωcm
1. Diameter: 76.2 ± 0.1mm
2. The type of alloying: N-type/ phosphorus
.3. Orientation (111) ±0.5º
4. Disorientation 4°±0.5º to <110> axis direction
5. Resistivity: ≥200Ωcm
6. Primary surface: semi std
7. Secondary surface: none
8. Thickness: 380±25μm
9. Overall thickness variation on the plate [...]
2019-11-08meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
Thinking thin brings new layering and thermal abilities to the semiconductor industry
This image shows a thick bulk gallium nitride (GaN) crystal wafer (2 inches in diameter) with a GaN film in the foreground fabricated by controlled spalling (its film thickness is ~20 microns or [...]
2017-07-26meta-author
Crystal growth furnace
Bridgman crystal growth furnace is a new type of crystal growth in the company independent research and development equipment, applicable to the tellurium cadmium zinc, cadmium telluride, hgcdte crystal growth of semiconductors. The device has the characteristics of high precision, high stability, [...]
2019-04-25meta-author