PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
SSP
Arsenic
N+
100
0,0 ± 0,0
010 ± 1
0.0 ± 0.4°
0.002 – 0.003 Ohmcm
200 ± 0.1 mm
725 ± 15 µm
6
60
8
SSP
Boron
P
100
0,0 ± 0,0
011 ± 1
3.5 – 7.0 Ohmcm
200 ± [...]
2019-02-25meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Characterization and comparison of commercially available silicon carbide (SIC) power switches
Published by:
K. Haehre ; M. Meisser ; F. Denk ; [...]
2019-12-09meta-author
Impact of GaN buffer growth conditions on photoluminescence and X-ray diffraction characteristics of MOVPE grown bulk GaN
Properties of metalorganic vapor phase epitaxy (MOVPE) grown GaN bulk layers with varying GaN buffer growth conditions are characterized by low-temperature (6K) photoluminescence (LT-PL) and X-ray diffraction (XRD). [...]
2013-05-09meta-author
GLOBAL DEAL TO SLASH TECH TARIFFS GOES INTO FORCE, BUT WITH A HITCH
After more than four years of often turbulent negotiations to expand the Information Technology Agreement (ITA), tariffs on roughly $1.3 trillion in trade in tech products finally start marching to zero today. [...]
2016-07-29meta-author
Epitaxial growth was performed on 8° off-axis 4H-SiC(0001) by horizontal hot-wall chemical vapor deposition (CVD) in a SiH4-C3H8-H2 system at 1550°C. High growth rates of 10–13 µm/h were attained by growth with a high SiH4 flow rate of 4.0 sccm. A mirror like surface [...]
2019-03-27meta-author
PAM XIAMEN offers Cr – Foil and Substrate.
Cr Metallic Substrate ( polycrystalline): 10×10 x 1.0 mm, 1 side polished-1
Polycrystal Cr ( Chromium ) metallic substrate
Purity: > 99.99%
Substrate dimension: 10×10 x 1.0 mm,
Surface finish: one side polished
Colbat Properties
Name: [...]
2019-05-08meta-author