Test grade silicon wafers-11

Test grade silicon wafers-11

PAM XIAMEN offers test grade silicon wafers

Below is just a short list of the test grade silicon substrates!

Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp
8 SSP Arsenic N+ 100 0,0 ± 0,0 010 ± 1 0.0 ± 0.4° 0.002 – 0.003 Ohmcm 200 ± 0.1 mm 725 ± 15 µm 6 60
8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 3.5 – 7.0 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 30 3,5 35
8 SSP Boron P+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0° 0.0005-0.001 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 3 100
8 SSP Boron P+ 100 0,0 ± 0,0 100 ± 1 0 ± 1° 0.001-0.004 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 3 100
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 5 – 7 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 30 6 30
8 SSP Boron P+ 111 0,0 ± 0,0 011 ± 1 3.0 ± 0.5° 0.005-0.010 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 8 80
8 SSP Boron P+ 111 0,0 ± 0,0 011 ± 1 3.0 ± 0.5° 0.005-0.010 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 8 80
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 0.1 – 0.2 Ohmcm 200 ± 0.2 mm 725 ± 25 µm 60 2 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 5 – 7 Ohmcm 200 ± 0.3 mm 725 ± 25 µm 50 50
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 5 – 10 Ohmcm 200 ± 0.2 mm 625  ± 25 µm 50 8 50
8 SSP Boron P 100 59,32 ± 2,5 110 ± 1 0.0 ± 1.0 ° 6 – 10 Ohmcm 200 ± 0.5 mm 725 ± 20 µm
8 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.3 ° 1 – 30 Ohmcm 200 ± 0.2 mm 972 ± 10 µm
8 SSP Boron P+ 111 0,0 ± 0,0 011 ± 1 3.0 ± 0.5° 0.005-0.010 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 8 80
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.5 mm 725 ± 25 µm 30 5 30
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.5 mm 725 ± 25 µm 30 5 30
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.5 mm 725 ± 25 µm 30 5 30
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0 ° 30 – 60 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 50 6 50
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 5 – 7 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 30 6 30
8 SSP Boron P+ 111 0,0 ± 0,0 011 ± 1 3.0 ± 0.5° 0.005-0.010 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 8 80
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,50 0.0 ± 0.5° 1 – 10 Ohmcm 200 ± 0.5 mm 725 ± 25 µm 30 5 30
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.7 – 50 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 5 30
8 SSP Boron P+ 100 0,0 ± 0,0 011 ± 2 0.0 ± 1.0° 0.005 – 0.020 Ohmcm 200 ± 0.2 mm 725 ± 25 µm 15 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 8 – 12 Ohmcm 200 ± 0.2 mm 550 ± 15 µm 30 5 35
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 1 – 5 Ohmcm 200 ± 0.2 mm 500 ± 10 µm 60 10 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0.7 – 50 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 5 30
8 SSP Boron P+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0° 0.0005-0.001 Ohmcm 200.0 ± 0.2mm 725 ± 15 µm 3 100
8 SSP Boron P 100 0,0 ± 0,0 0T1 ± 1 0.0 ± 1.0° 1 – 30 Ohmcm 200 ± 0.2 mm 864 ± 10 µm 50
8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 0.0 ± 2.0° 9 – 18 Ohmcm 200 ± 0.25 mm 725 ± 20 µm 60 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,50 3.5 – 7.0 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 30 3,5 35
8 SSP Boron P+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0° 0.0005-0.001 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2 6 – 10 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 65 4 60
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 6.0 ± 1.0° 9 – 18 Ohmcm 200 ± 0.5 mm 725 ± 25 µm 5 40
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 5 – 7 Ohmcm 200 ± 0.3 mm 725 ± 25 µm 50 50
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 8.5 – 22 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 50 5 50
8 SSP Boron P 100 0,0 ± 0,0 110 ± 0,20 0.0 ± 0.2° 1 – 10 Ohmcm 200 ± 0.2 mm 600 ± 5 µm 3
8 SSP Boron P 100 0,0 ± 0,0 011 ± 1 0.0 ± 0.5° 3.5 – 7.0 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 30 3,5
8 SSP Boron P 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 0.1 – 0.2 Ohmcm 200 ± 0.2 mm 725 ± 25 µm
8 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.15° 1 – 5 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 25 4 35
8 SSP Boron P 100 0,0 ± 0,0 01-1 ± 1 0.0 ± 0.75° 11.5 ± 3.5 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 4 60
8 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.15° 1 – 5 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 25 4 35
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 1 – 5 Ohmcm 200 ± 0.2 mm 725 ± 5 µm 60 10 60
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 5 40
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1° 1.5 – 3.0 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 60 12 60
8 SSP Phosphorus N 100 0,0 ± 0,0 00T ± 1 0.0 ± 0.5° 30 ± 3 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 60 3 60
8 SSP Phosphorus N 100 0,0 ± 0,0 001 ± 1 0.0 ± 0.5° 55 Ohmcm ± 8 % 200 ± 0.2 mm 725 ± 15 µm 30 4 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1.5 – 3.0 Ohmcm 200 ± 0.25 mm 725 ± 25 µm 30 4,5 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1.5 – 3.0 Ohmcm 200 ± 0.25 mm 725 ± 25 µm 30 4,5 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 90 ± 9 Ohmcm 200 ± 0.2 mm 725 ± 20 µm
8 SSP Phosphorus N 100 0,0 ± 0,0 001 ± 1 0.0 ± 0.5° 23 Ohmcm ± 8 % 200 ± 0.2 mm 725 ± 15 µm 30 4 30
8 SSP Phosphorus N 100 0,0 ± 0,0 00T ± 1 0.0 ± 0.5° 30 ± 3 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 60 3 60
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1.5 – 3.0 Ohmcm 200 ± 0.25 mm 725 ± 25 µm 30 4,5 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 2  – 20 Ohmcm 200 ± 0.3 mm 725 ± 20 µm
8 SSP Phosphorus N 100 0,0 ± 0,0 001 ± 1 0.0 ± 0.5° 34 Ohmcm ± 8 % 200 ± 0.2 mm 725 ± 15 µm 30 4 30
8 SSP Phosphorus N 100 0,0 ± 0,0 00T ± 1 0.0 ± 0.5° 30 ± 3 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 60 3 60
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 60 ± 6 Ohmcm 200 ± 0.2 mm 725 ± 20 µm 5 40
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 90 ± 9 Ohmcm 200 ± 0.2 mm 725 ± 20 µm
8 SSP Phosphorus N 100 0,0 ± 0,0 001 ± 1 0.0 ± 0.5° 55 Ohmcm ± 8 % 200 ± 0.2 mm 725 ± 15 µm 30 4 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 15 µm
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1.5 – 3.0 Ohmcm 200 ± 0.25 mm 725 ± 25 µm 30 4,5 30
8 SSP Phosphorus N 100 0,0 ± 0,0 001 ± 1 0.0 ± 0.5° 23 Ohmcm ± 8 % 200 ± 0.2 mm 725 ± 15 µm 30 4 30
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1.5 – 3.0 Ohmcm 200 ± 0.25 mm 725 ± 25 µm 30 4,5
8 SSP Phosphorus N 100 0,0 ± 0,0 110 ± 1 0.0 ± 1.0° 1 – 10 Ohmcm 200 ± 0.2 mm 725 ± 15 µm
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5 ° 0.0012-0.0015 Ohmcm 200.0 ± 0.2 mm 725 ± 15 µm 30 4 45
8 SSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0 ± 0.5° 0,005 – 0,020 Ohmcm 200 ± 0.2 mm 725 ± 10 µm 60 10 60
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0005-0.001 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0010-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 110 ± 1 0.0±0.5 ° 0.0012-0.0015 Ohmcm 200.0±0.2 mm 725±25 µm 4 50
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5 ° 0.0012-0.0015 Ohmcm 200.0 ± 0.2 mm 725 ± 15 µm 30 4 45
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5 ° 0.0012-0.0014 Ohmcm 200.0 ± 0.2 mm 725 ± 15 µm 40 4 55
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5 ° 0.0011-0.0013 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 3 55
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0010-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 0.5 ° 0.0013-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 40 3 55
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0010-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 00T ± 1 0.4 ± 0.2° <= 0.0013 Ohm-cm 200 ± 0.2 mm 725 ± 15 µm 40 3 40
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 -0.75-0.75° 0.0011-0.0017 Ohmcm 199.5-200.5mm 710-740 µm 20 4 40
8 SSP Red Phos. N+ 100 57,5 ± 1,2 010 ± 1 0.0 ± 0.5 ° 0.0011-0.0013 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 30 3 45
8 SSP Red Phos. N+ 100 57,5 ± 1,2 010 ± 1 0.0 ± 0.5 ° 0.0011-0.0013 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 30 3 45
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0010-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0012-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 0,0 ± 0,0 100 ± 1 0.0 ± 1.0 ° 0.0010-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 3 100
8 SSP Red Phos. N+ 100 57,5 ± 1,2 010 ± 1 0.0 ± 0.5 ° 0.0013-0.0015 Ohmcm 200 ± 0.2 mm 725 ± 15 µm 30 3 45

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-02-25

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