PAM-XIAMEN offers 950nm InGaAs quantum well laser diode wafers. In the application of optoelectronic devices, the InGaAs / GaAs strained quantum well (QW) structure is one of the research hotspots, and the emission band of the InGaAs / GaAs strained quantum well covers the [...]
2019-03-13meta-author
PAM XIAMEN offers 3″FZ Prime Silicon Wafer Thickness: 350±15um.
3″ Si epi-ready wafer
Si wafer
FZ
Diameter: 76mm
Thickness: 350±15um
Dopant: P
Orientation: (100)
Resistivity: 500-1000 Ohm*cm
Double side polished, epi-ready
laser mark with numbering from N1k- 001 to NN1k- 200 for alll 200pcs [...]
2019-07-03meta-author
PAM XIAMEN offers 2 inch AlN on sapphire wafer grown by MOCVD, which is the major technology for growing single-crystal aluminum nitride onto large-size, low-cost, and mature sapphire substrate. One important utilization of high-quality AlN-on-sapphire template is the deep ultraviolet (DUV) optoelectronic devices.
1. Specification of [...]
2019-03-11meta-author
PAM XIAMEN offers LD Bare Bar for 780nm@cavity 2.5mm.
Brand: PAM-XIAMEN
Wavelength: 780nm
Filling Factor: 38%
Output Power: 80W
Cavity Length:2.5mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM-XIAMEN, one of leading GaN substrate manufacturers, offers 10*10mm2 N-Type Freestanding GaN Substrate. To get more specific information please see the table below:
1. N-Type Freestanding GaN Substrate Specification
Item
PAM-FS-GAN-50-N
Dimension
10 x 10.5 mm2
Thickness
380+/-50um
Orientation
C plane (0001) off angle toward M-axis 0.35 ±0.15°
Conduction Type
N-type / Si Doped
Resistivity (300K)
< 0.05 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness:
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5x 106 cm-2 (calculated by CL)*
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in [...]
2020-08-17meta-author
III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the [...]
2023-02-16meta-author