PAM XIAMEN offers 2 inch Aluminum Nitride AlN Template on sapphire.
2 INCH ALUMINUM NITRIDE ALN TEMPLATE ON SAPPHIRE (0001) SEMI-INSULATING TYPE 4000~5000NM
Conductivity type: Semi-insulating AlN
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 4 ~ 5 um (4000~5000 nm)
Edge Exclusion Zone: < 2 mm
Usable area: >90%
Orientation: C plane (0001) ± 1°
Total Thickness Variation: <15 μm
Crystallinity: XRD FWHM of (0002) < 350 arcsec, XRD FWHM of (10-12) < 450 arcsec
Surface Roughness Ra <5 nm (10 µm x 10 µm)
Substrate Structure: Sapphire (0001)
Polishing: Single side polished (SSP). Double-side polished (DSP) are available upon request.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Our goal is to meet all of your requirements, no matter how small orders and how difficult questions they may be,
to maintain sustained and profitable growth for every customer through our qualified products and satisfying service.