The growth of cubic silicon carbide on silicon, namely 3C-SiC/Si, has been extensively studied at the University of South Florida over the past decade and numerous electronic and biomedical applications explored using this material system. The key step to 3C-SiC devices is the growth [...]
2020-03-17meta-author
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices
We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
2013-04-24meta-author
PAM XIAMEN offers 8″CZ Prime Silicon Wafer With Notch
It will be carried out after the silicon ingot is made. A flat angle is cut on the silicon ingot below 200 mm, which is called flat. In order to reduce waste, only a small round hole [...]
2020-06-15meta-author
PAM XIAMEN offers thinnest Silicon Wafers.
We have sold Silicon Wafers with a 2 micron thickness.
But our biggest selling thin silicon wafer is:
100mm P(100) 1-10 ohm-cm 50um SSP and DSP TTV <2um
Please let us know what specs you would like us to quote?
For more information, [...]
2019-02-26meta-author
As one of 5G semiconductor manufacturers, Xiamen Powerway Advanced Material Co., Ltd. can offer compound semiconductor materials with unique advantages in the physical properties, and the 5g compound semiconductor market of PAM-XIAMEN is enlarging. The semiconductor materials have experienced three stages of development:
the first stage is group [...]
2021-05-06meta-author
SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest.
1. Specification of SPCW Wide Range Radiation Doses Module
Energy range
30KeV~1.5MeV (standard) / [...]
2019-04-23meta-author