Silicon wafers with various metal depositions are for sale in sizes from 2 inch to 12 inch. Metal deposition on silicon wafer is usually processing on the substrate surface, and thickness of the substrate typically is 300um~700um. A wafer list is shown below for [...]
2021-10-13meta-author
Semiconductor silicon carbide (4H SiC) has excellent properties such as wide bandgap, high breakdown field strength, high electron mobility, high thermal conductivity, and good chemical stability. It has demonstrated important application potential in fields such as power electronics, radio frequency microwave, and quantum information. [...]
2024-04-09meta-author
Group III nitride materials are a kind of direct band gap materials, which have the advantages of wide band gap, strong chemical stability, high breakdown electric field and high thermal conductivity. They have broad application prospects in the fields of efficient light-emitting devices and [...]
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Since more and more mobile phone manufacturers launch the gallium nitride fast charger, what is a GaN fast charger? A gallium nitride charger is that the core device of such a fast charger for smartphones, laptops and etc. adopts GaN FETs chip, which can be offered by [...]
2021-06-11meta-author
Semiconductor lasers in the near-infrared band (760-1060nm) based on GaAs substrates are the most mature and most widely used, and have already been commercialized. We can supply GaAs laser diode wafer for a wavelength of 940nm. Moreover, a variety of laser wafers with different wavelengths [...]
2022-07-28meta-author
PAM-XIAMEN offers (11-22) Plane Si-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- SI
Dimension
5 x 10 mm2 or 5 x 20 mm2
Thickness
380+/-50um
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
Semi-Insulating
Resistivity (300K)
> 106 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author