PAM XIAMEN offers GaN on Sapphire for Power.
1.1 GaN HEMT Structure on Sapphire for Power Application
Wafer size | 2”, 3”, 4”, 6” |
AlGaN/GaN HEMT structure | Refer 1.2 |
Carrier density | 6E12~2E13 cm2 |
Hall mobility | / |
XRD(102)FWHM | ~arc.sec |
XRD(002)FWHM | ~arc.sec |
Sheet Resistivity | / |
AFM RMS (nm)of 5x5um2 | <0.25nm |
Bow(um) | <=35um |
Edge exclusion | <2mm |
SiN passivation layer | 0~30nm |
Al composition | 20-30% |
In composition | 17% for InAlN |
GaN cap | / |
AlGaN/(In)AlN barrier | / |
AlN interlayer | / |
GaN channel | / |
C doped GaN buffer | / |
Nudeation | / |
Substrate material | Sapphire substrate |
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.