PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 1
0.0 ± 1.0°
1 – 100 Ohmcm
100 ± 0.3 mm
302 ± 4 µm
35
4
35
4
DSP
Boron
P
100
32,5 ± 2,5
110 ± 0,50
90 ± 5.0 °, [...]
2019-02-25meta-author
Optical interference effect of a thick absorbing LT-GaAs layer on a Bragg reflector
Near-infrared reflectance spectra of 5 μm thick low-temperature (LT) GaAs films on GaAs/AlAs Bragg reflectors (BRs) have been studied by model calculations as a function of the linear absorption coefficient of the films αf. [...]
PAM XIAMEN offers GGG single crystal.
Composition
GGG
YSGG
S-GGG(CaMgZr:GGG)
NGG
GYSGG
GSGG
Lattice constant
12.376 Å
12.426 Å
12.480 Å
12.505Å
12.507 Å
12.554 Å
Diffraction(2θ)
51º7′
50º44′
50º43′
50º41′
50º40′
50º22′
Melting Point
~1800 oC
~1877℃
~1730 oC
~1550 oC
~1730 oC
~1730 oC
GGG, (111), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 1sp
GGG, (100), 5x5x0.5mm, 2sp
GGG, (110), 5x5x0.5mm, 1sp
GGG (111), 10x10x0.5mm, 2sp
GGG, (111), 10x10x0.5mm, 1sp
GGG, [...]
2019-04-26meta-author
PAM XIAMEN offers GaAs(100) Cr-doped crystal.
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp
GaAs single crystal wafer
Growing Method: VGF
Orientation: [...]
2019-04-22meta-author
As one of leading SiC epi wafer suppliers, PAM-XIAMEN offers SiC epi wafer, and the SiC epi wafers type includes N type and P type. The SiC epi wafer thickness from 1um to 250um can be produced, and the silicon carbide epi wafer prices [...]
2021-05-17meta-author
PAM XIAMEN offers high quality GaSb single crystal wafers.
1. Specifications of GaSb Single Crystal Wafers
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, [...]
2019-04-22meta-author