PAM XIAMEN offers high quality GaSb single crystal wafers.
GaSb undoped
GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, undoped,P-type 2″x0.4 mm ,2sp
GaSb Wafer (111)-B, undoped,P-type 2″x0.4 mm ,2sp
GaSb Si-doped
GaSb (100), P-type, Si doped, 2″ x 0.450 mm wafer, 1sp
GaSb Te-doped
GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp Carrier Concentration: 3.5×10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp,Carrier Concentration: (1-7)x10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.5mm wafer 1sp
GaSb Zn-doped
GaSb, (100), Zn- doped, P-type, 2″ dia x 0.45mm, 1sp
GaSb, (100), Zn- doped,, P-type, 2″ dia x 0.45mm, 1sp
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.