GaSb single crystal wafers

GaSb single crystal wafers

PAM XIAMEN offers high quality GaSb single crystal wafers.

GaSb undoped

GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp
GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished
GaSb Wafer (111)-A, undoped,P-type 2″x0.4 mm ,2sp
GaSb Wafer (111)-B, undoped,P-type 2″x0.4 mm ,2sp

GaSb Si-doped

GaSb (100), P-type, Si doped, 2″ x 0.450 mm wafer, 1sp

GaSb Te-doped

GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp Carrier Concentration: 3.5×10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.45mm wafer 1sp,Carrier Concentration: (1-7)x10^17 cm^-3
GaSb (100), N Type, Te doped, 2″D x0.5mm wafer 1sp

GaSb Zn-doped

GaSb, (100), Zn- doped, P-type, 2″ dia x 0.45mm, 1sp
GaSb, (100), Zn- doped,, P-type, 2″ dia x 0.45mm, 1sp

 

FAQ:

Q1: Can we have a better Bow and Warp of GaSb wafer, <5um?

A: BOW and WARP should be <8um, 5um is too difficult.

Q2: what is the dislocation density in a regular manner and can we have EPD mapping of GaSb wafer ?

A: EPD<1000, see below mapping:

For more information, please contact us email at [email protected] and [email protected].

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