GaAs (100) crystal-4

PAM XIAMEN offers GaAs(100) Cr-doped crystal.

GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp

GaAs single crystal wafer
Growing Method:               VGF
Orientation:                       (100)
Size:                                2″ dia x 0.35mm
Polishing:                         Two  sides  polished
Doping:                             Cr- doped
Conductor type:                 S-I
Ra(Average Roughness) :    < 0.4 nm
Mobility:                            5560-5950 cm^2/V.S
Carrier Concentration:         9.02E06~1.26E7/cc
Resistivity:                        (0.8-1.3) E8  ohm.cm
EPD:                                <5000cm^2

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

Share this post