PAM XIAMEN offers GaAs(100) Cr-doped crystal.
GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2″ dia x 0.35mm, 2sp
GaAs single crystal wafer
Growing Method: VGF
Size: 2″ dia x 0.35mm
Polishing: Two sides polished
Doping: Cr- doped
Conductor type: S-I
Ra(Average Roughness) : < 0.4 nm
Mobility: 5560-5950 cm^2/V.S
Carrier Concentration: 9.02E06~1.26E7/cc
Resistivity: (0.8-1.3) E8 ohm.cm
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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