AlGaInP LED Chip Sepcification
· Orange LED Wafer Substrate:
P+GaAs
p-GaP
p-AlGaInP
MQW
n-AlGaInP
DBR n-ALGaAs/AlAs
Buffer
GaAs substrate
·Chip Sepcification (Base on 7mil*7mil chips)
Parameter
Chip Size
7mil(±1mil)*7mil(±1mil)
Thickness
7mil(±1mil)
P Electrode
U/L
N Electrode
AU
Structure
Such as right-shown
·Optical-elctric characters
Parameter
Condition
Min.
Typ
Max.
Unit
Forward voltage
If=10μA
1.35
┄
┄
V
Reverse voltage
If=20mA
┄
┄
2.2
V
Reverse current
V=10V
┄
┄
2
μm
Wavelength
If=20mA
565
┄
575
nm
Half wave width
If=20mA
┄
10
┄
nm
·Light intensity characters
Brightness code
LA
LB
LC
LD
LE
LF
LG
LH
IV(mcd)
10-15
15-20
20-25
25-30
30-35
35-40
40-50
50-60
Source:PAM-XIAMEN
If you need more information about AlGaInP LED Chip Sepcification, please visit our website:https://www.powerwaywafer.com, send us email [...]
PAM-XIAMEN Offers Larger Free-Standing Semi-Insulating GaN Substrates
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of ultra-high purity crystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN) materials and other related products and services announced the new availability of 2″ size native semi-insulating GaN (SI GaN) substrates,which is on mass production in 2011. This new [...]
2012-07-09meta-author
Porous Silicon Wafer
PAM XIAMEN offers Porous Silicon Wafer.
The novel uses of porous silicon include powering sattelites and perhaps even space ships!
In the early 2000s scientists discoverd that hydrogenated porous silicon reacts explosively with oxygen at very low (cryogenic) temperatures. A porous silicon wafer in [...]
2019-02-15meta-author
PAM XIAMEN offers 2″ FZ Prime Silicon Wafer.
Si wafer
Dia 2” x 260μm
FZ
(111)
Type n doped P
R > 300 ohm.cm
2 side spolished
With flats
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com [...]
2019-07-01meta-author
High-quality GaN films are deposited on freestanding thick diamond films by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa flux dependent structural, morphological, and electrical characteristics of GaN films were investigated by x-ray diffraction analysis (XRD), reflection high-energy electron [...]
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
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