PAM XIAMEN offers 4″ FZ Intrinsic Silicon Wafer SSP
4″ FZ (100) intrinsic, SSP
wafer Si FZ (100)
dia 4’’ x 525µm
intrinsic
R > 20,000 ohm.cm
one side polished with SEMI Std flats
Roughness<0.5nm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-17meta-author
PAM XIAMEN offers InP Wafer. Detailed wafer information, please refer to below:
1. InP Wafer Specifications
InP(100)
InP (100) Sn-doped
InP-(VGF- Grown) (100) Sn doped, 2″x0.35mm wafer, 1sp
InP (100)undoped
InP (100) undoped, 10×10 x 0.5 mm wafer, 1sp
VGF InP (100) undoped, 2″ x 0.35 [...]
2019-05-06meta-author
SWIR (short wave infrared) detector is widely used in aerospace remote sensing, low-light night vision, medical diagnosis, agricultural industry, security monitoring and other fields. The short-wave infrared InGaAs detector has the characteristics of high detection rate, high uniformity and high stability, and is one [...]
2022-04-02meta-author
PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes (p-n junction SiC epi wafer) as follows:
SiC-On-SiC Epi Wafer For Pin-Diodes
1. Specifications of SiC Epitaxy on Silicon Carbide Substrate
pin-diodes structure 1: SiC-on-SiC epi-wafer PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: [...]
2020-08-04meta-author
Dummy grade single crystal indium phosphide wafer is available with doping S grown by VGF. The electron concentration of the N-type indium phosphide wafer reaches 1018cm-3, and the indium phosphide resistivity is very low, generally 10-2~10-3Ω·cm. It is mostly used in high-speed optoelectronic devices, such as LD, LED, [...]
2021-08-06meta-author
Semi-insulating indium phosphide (formula: InP) wafer at prime grade for sale is dark gray crystal with a bandwidth (Eg=1.35 eV) at room temperature, a dissociation pressure of 2.75MPa at a melting point, an electron mobility of 4600cm2/(V·s), and a hole mobility of 150cm2/(V·s). PAM-XIAMEN [...]
2021-08-06meta-author