PAM XIAMEN offers W – Tungsten Polycrystalline Metal Substrates.
General Properties for Tungsten
Symbol W
Atomic Number 74
Atomic Weight: 183.84
Crystal structure: BCC
Lattice constant at room temperature: 0.316 nm
Density: 19.25 g/cm3
Melting Point: 3422 °C
Boiling Point: 5555 °C
Tungsten (W) Polycrystalline Substrate: [...]
2019-05-10meta-author
How is silicon carbide (SiC) chip made? Generally speaking, chips are semi-finished products that have been cut from wafers. PAM-XIAMEN can offer SiC wafers for making chips, more specifications please refer to https://www.powerwaywafer.com/sic-wafer. Each wafer integrates hundreds of chips, and each chip consists of [...]
2022-07-27meta-author
PAM XIAMEN offers (111) Silicon Wafers.
If you don’t see what you need then please email us your specs.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
7″
n-type Si:P
[111] ±0.5°
300 ±15
P/P
FZ >6,000
SEMI Prime, 1Flat (57.5mm), Lifetime>1,000μs, Empak cst
8″
Intrinsic Si:-
[111] ±0.5°
750
E/E
FZ >10,000
SEMI notch, TEST (defects, [...]
2019-02-22meta-author
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13meta-author
PAM-PL01 series detectors are linear pixel electrode structured detector based on CZT crystal, they can counting X-ray and imaging.
1. Specification of CZT Photon Counting Linear Array Detector
Size
16 pixels
Detector crystal
CdZnTe
Crystal Density
5.8g/cm3
Volume resistivity
>1010Ω.cm
Dimension
16.5×4.4 mm2
Thickness
2.0 mm
Pixel array
16×1
Pixel size
0.9×2.0mm2
Electrode material
Au
Standard working voltage
-450V
Max. working voltage
600V
Single pixel leakage current
<0.1nA
Max. counting rate
>0.7Mcps/mm2
Operation temperature
25℃~35℃
Storage temperture
10℃~40℃
Storage [...]
2019-04-24meta-author
PAM XIAMEN offers 4″Silicon Ignot.
Silicon ingot, per SEMI, G 4″Ø (Diameter 100.5±0.3mm),
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 20,000 Ohmcm,
Ground Ingot, NO Flats. Lifetime>1,000us,
Ox/Carbon <1E16/cc.
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found [...]
2019-07-05meta-author