PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[111]
2″
330
P/E
3-7
SEMI Prime
n-type Si:P
[111]
2″
275
P/P
2.5-3.5
SEMI Prime
n-type Si:P
[111]
2″
5000
P/E
2.0-3.1
Prime, NO Flats, Individual cst
n-type Si:P
[111]
2″
5000
P/E
2-3
Prime, NO Flats, Individual cst
n-type Si:P
[111-8°]
2″
280
P/E
1.3-1.8
SEMI Prime,
n-type Si:P
[111-3.5°]
2″
280
P/E
1-30
SEMI Prime,
n-type Si:P
[111-2.5°]
2″
500
C/C
1-20
SEMI Prime
n-type Si:P
[111]
2″
7500
P/E
1-10
SEMI Prime, , Individual cst
n-type Si:Sb
[111-3°]
2″
300
P/E
~0.02
SEMI Prime
n-type Si:Sb
[111-1° towards[112]]
2″
500
P/E
0.017-0.026
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
200
P/E
~0.01
SEMI Prime,
n-type Si:Sb
[111]
2″
280
P/E
0.01-0.02
SEMI Prime,
n-type Si:Sb
[111-2°]
2″
280
P/E
0.008-0.020
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.0030-0.0034
SEMI Prime,
n-type Si:As
[111]
2″
300
P/E
0.001-0.005
SEMI Prime,
n-type Si:As
[111-4°]
2″
350
P/E
0.001-0.005
SEMI [...]
2019-03-07meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
SI.
Undoped
VGF
-100
>1E7
600-650
P/E
PRIME
76.2
SI.
Undoped
VGF
-100
>1E7
610-660
P/P
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Undoped
CZ
-100
>30
300-350
P/P
EPI
76.2
Undoped
CZ
-100
>30
350-400
P/E
EPI
76.2
N
Sb
CZ
(100)-6
.01-.04
100-200
P/E
TEST
76.2
N
Sb
CZ
-100
.005-.02
300-350
P/P
EPI
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
EPI
76.2
P
Ga
CZ
-100
.01-.04
300-350
P/P
EPI
76.2
P
Ga
CZ
-100
.01-.04
350-400
P/E
EPI
76.2
N
Si
VGF
-100
600-650
P/E
PRIME
76.2
P
Zn
VGF
-100
600-650
P/E
PRIME
76.2
Si
Fe
VGF
-100
5000000
600-650
P/E
PRIME
76.2
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
76.2
Shipping Cassette
ePak
Holds25Wafers
Clean Room
In addition, we can offer substrate used as Alpha Spectrometer Consumables:
Silicon substrate (PAM210610 – SI)
Main technical characteristics:
Material: silicon (can be replaced with quartz).
Diameter – (74.0 ± 0.5) mm.
Thickness – (0.5 ± 0.05) mm.
Grinding [...]
2019-03-04meta-author
PAM XIAMEN offers Au (highly oriented polycrystalline)/Ti/SiO2/Si substrate: PAM-191005-SI/SIO2/TI/AU: Au( highly oriented polycrystalline)/Ti/ SiO2 on Silicon substrate ,4″x0.525 mm,1sp P-type B-doped, Au(111)=50 nm, Ti=2 nm ,SiO2=300nm
Specifications Au/Ti/SiO2/Si substrate:
1.Structure: Au/Ti/ SiO2 on Si substrate
Flim thickness:
Au(111)=50 nm
Ti=2 nm
SiO2=300 nm
2.Substrate spec:
Material:Si substrate
Size: 4″ dia.
Orientation:(100)
Type:P type
Dopant:B doped
Thickness:525 um
Grade: [...]
2019-04-26meta-author
As an important part of new materials, semiconductor materials are the top priority of all countries in the world for the development of electronic information industry. It supports the development of localization of electronic information industry and is of great significance to industrial structure [...]
2019-04-02meta-author
PAM XIAMEN offers (110) Silicon Substrates.
If you don’t see what you need then please email at sales@powerwaywafer.com.
Diam
(mm)
Material
Dopant
Orient.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
6″
p–type Si:B
[110] ±0.5°
390 ±10
C/C
>10
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
500
P/E
FZ >10,000
Prime, 2Flats, Empak cst, TTV<5μm
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] ±0.5°
200
P/P
FZ 1–2
SEMI Prime, 2Flats, Empak cst
6″
p–type Si:B
[110] [...]
2019-02-22meta-author
PAM XIAMEN offers 785nm laser diode wafers grown on GaAs substrate. Specific epi structure please see below:
1. Specifications of 785nm GaAs LD Epi Wafer
No.1 AlAs / AlGaAs LD Epi on GaAs PAM200420-LD
Layer
Material
Thickness
Notes
Layer 7
AlAs
–
Layer 6
GaAs
–
Layer 5
AlAs
–
Layer 4
AlGaAs
150 nm
Emitting at 785nm
Layer 3
AlAs
–
Layer 2
AlGaAs
–
Emitting at 700 nm
Layer [...]
2019-03-13meta-author