Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing [...]
2018-11-26meta-author
GaAs quantum well VCSEL wafer with an emission wavelength of 808nm is available for optical pumping. VCSEL (Vertical Cavity Surface Emitting Laser) is developed on the basis of gallium arsenide semiconductor materials. The VCSEL fabrication of devices has the advantages of small size, small [...]
2021-07-19meta-author
PAM XIAMEN offers Co Metallic Substrate.
Co Single Crystal Substrate (100) 10×10 x1.0 mm, 1 side polished
Co Single Crystal Substrate (111) 10×10 x 1.0 mm, 1 side polished
Co Metallic Substrate (polycrystalline): 10×10 x 1.0 mm, 1 side polished
Cr Metallic Substrate ( [...]
2019-05-08meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
p-type Si:B
[100]
3″
300
P/P
0.5-10.0
SEMI Prime, TTV<2μm, Empak cst
p-type Si:B
[100]
3″
315
P/P
0.5-10.0
SEMI Prime, TTV<3μm
p-type Si:B
[100]
3″
3,050 ±50
C/C
>0.5
1Flat, Individual cst (can be ordered singly)
p-type Si:B
[100]
3″
250
P/E
0.15-0.20
SEMI TEST (Scratches), in sealed Empak cassettes of 3 wafers
p-type Si:B
[100]
3″
250
BROKEN
0.15-0.20
Broken wafers, in Epak cst
p-type Si:B
[100]
3″
356
P/P
0.015-0.020
SEMI
p-type Si:B
[100-4° towards[110]] ±0.5°
3″
230
P/E
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
3″
300
P/E
0.01-0.02
SEMI Prime
p-type [...]
2019-03-06meta-author
Silicon Nitride Waveguide – Substrates and Services Provided
PAM XIAMEN offers Silicon Nitride Waveguide
Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides [...]
2019-02-12meta-author
PAM-XIAMEN offers 10*10mm2 SI (Semi-insulating) Freestanding GaN Substrate, which has a resistivity greater than 106 ohm-cm. Semi-insulating gallium nitride substrate with the advantages high critical breakdown electric field and good thermal stability are widely used in high-frequency and high-power devices. Following listed is one of the specifications:
1. [...]
2020-08-17meta-author