PAM XIAMEN offers 6″ FZ Silicon Wafer-7
GQ56b Silicon wafers, per SEMI Prime, P/P 6″Ø×675±10µm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro > 10,000 Ohmcm,
Both-sides-polished, One SEMI Flat
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-19meta-author
GaSb (Gallium Antimonide) crystal substrate is available with P type or N type in various sizes. The minimum value of GaSb substrate mobility can reach 200 cm2/V.s, and the maximum can reach 3500 cm2/V.s. PAM-XIAMEN’s gallium antimonide semiconductor material is a single crystal grown by a special [...]
2019-03-12meta-author
High transparency AlN template on sapphire and silicon substrate are available from PAM-XIAMEN, which are suitable for making high-frequency BAW, SAW devices and power electronic. Aluminum nitride (AIN) template not only has the characteristics of AIN piezoelectric film, but also has the characteristics of higher sound propagation rate, [...]
2019-04-26meta-author
The vibrational energy of the molecule is larger than the rotational energy. When the vibrational energy level transition occurs, it is inevitably accompanied by the transition of the rotational energy level, so the pure vibrational spectrum cannot be measured, but only the vibrational-rotational spectrum [...]
2022-06-08meta-author
Highlights
•The thickness of graphene grown on SiC was determined by AES depth profiling.
•The AES depth profiling verified the presence of buffer layer on SiC.
•The presence of unsaturated Si bonds in the buffer layer has been shown.
•Using multipoint analysis thickness distribution of the graphene on [...]
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of Laser diode epitaxial structure and other related products and services announced the new availability of size 3” is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN‘s product line.
Dr. Shaka, [...]
2018-02-13meta-author