Effect of Mn on the low temperature growth of GaAs and GaMnAs
With the combined use of reflection high energy electron diffraction (RHEED) and scanning tunneling microscope, the growing surfaces of GaAs and GaMnAs were investigated. At the start of GaAs growth at low temperature [...]
PAM XIAMEN offers LD Bare Bar for 940nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 940nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
PAM XIAMEN offers Nickel Single crystal.
tomic number: 28
Atomic number: 28
Atomic mass: 58.71 g.mol -1
Atomic mass: 58.71 g.mol -1
Crystal structure: F.C.C
Crystal structure: F.C.C
Lattice Constant: 0.325 nm
Lattice Constant: 0.325 nm
Ni Single crystal
Ni Single Crystal Substrate, <100>, 10 x 5 x 0.5 mm, 1 side polished
Ni Single Crystal Substrate, <100>, 10×10 x [...]
2019-05-13meta-author
PAM XIAMEN offers Ti: Sapphire Crystal
Ti: Sapphire Crystal
Ti Sapphire Crystal
Introduction
Titanium sapphire (titanium-doped sapphire, Al2O3 Ti3+) has a wide emission band from 660 to 1050 nm.
This contributes to a variety of existing and potential applications. Examples include tunable continuous wave lasers,
mode-locked oscillators, chirped pulse amplifiers, thin-plate [...]
2019-07-24meta-author
Silicon wafers contribute significantly to the photovoltaic module cost. Kerfless silicon wafers that grow epitaxially on porous silicon (PSI) and are subsequently detached from the growth substrate are a promising lower cost drop-in replacement for standard Czochralski (Cz) wafers. However, a wide technological processing [...]
2018-11-26meta-author
PAM-XIAMEN offers C-Plane Sapphire Substrate, single side polished or double side polished, please see below spec:
1. Specifications of C-Plane Sapphire Substrate
2” C-plane SSP Sapphire Substrate:
No
Item
Specification
1
Material
High PurityAl2O3
2
Diameter
50.8+0.1mm
3
Thickness
430土15um
4
TTV
≤10μm
5
LTV
≤1.5μm
6
Bow
-10~0μm
7
Warp
≤10μm
8
Primary Flat Length
16.0土1.0mm
9
Front Surface Roughness(Ra)|
Ra≤0.2nm
Back Surface Roughness(Ra)
0.7~1.2μm
11
Primary Flat Orientation
A-plane土0.2°
12
Surface Orientation
C-Plane(0001)
off Angle 0.2o+0.1″(M-axis);0°+0.1″(A-axis)
13
Laser Mark
back side or frontside
14
Package
25pcs/Cassette, Vacuum-sealed, Nitrogen-
[...]
2020-05-20meta-author