PAM XIAMEN offers Glass Substrates(BK7 Glass and Corning Glass).
BK7 Glass
BK 7 (Schott) glass substrates 76.2mm x 25.4 mm x 0.5 mm, Double sides optical polished
BK7 (Schott) glass substrates 10 x10 x 0.5 mm, Double sides polished ( 60/40)
BK7 (Schott) glass [...]
2019-04-18meta-author
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
GaN/SiC HEMT epi-wafers
PAM-XIAMEN offers GaN/SiC HEMT epi-wafers
GaN on SiC HEMT epi-wafers (PAM-101009-HEMT
1) 4-inch SiC substrate
2) nucleation layer
3) Buffer layer (GaN channel, GaN buffer) – 15000-20000 A
4) Barrier layer (AlN) – 60-70A
5) Spacer (GaN) – 10A
6) SiN layer – 30A
Expected [...]
2020-03-18meta-author
Effects of post-growth annealing on the performance of CdZnTe:In radiation detectors with different thickness
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely [...]
The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]
2019-12-23meta-author