Silicon dioxide wafer can be offered by PAM-XIAMEN, which is single / double side polished and one-sided / double-sided oxidation in various sizes. In the integrated circuit process, oxidation is an indispensable process technology. Since early people discovered that the diffusion rate of impurity [...]
2019-04-29meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
4″
500
P/E
FZ >10,000
Prime, TTV<5μm
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
Prime
p-type Si:B
[110] ±0.5°
4″
200
P/P
FZ 1-2
SEMI Prime, Extra 8 scratched wafers in cassette free of charge
p-type Si:B
[100]
4″
220 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100]
4″
230 ±10
P/E
FZ >10,000
SEMI Prime
p-type Si:B
[100-4° towards[110]] ±0.5°
4″
525
P/E
FZ >2,000
SEMI Prime, TTV<5μm
p-type Si:B
[100]
4″
450
P/P
FZ 1,000-2,000
SEMI Prime
p-type Si:B
[100]
4″
420
C/C
FZ 850-900
SEMI Prime
p-type Si:B
[100]
4″
200 ±10
P/P
FZ 100-120
SEMI Prime
p-type Si:B
[100]
4″
250
P/P
FZ 1-3 {0.97-1.01}
SEMI [...]
2019-03-05meta-author
PAM XIAMEN offers 80+1mm FZ Si Ingot-2
FZ Si Ingot
Diameter 80+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-18meta-author
PAM XIAMEN offers4″ FZ Prime Silicon Wafer-6
Substrate Monocrystalline Silicon
Diameter 100 ±0.3mm
Growth method Fz
Lifetime>1000µsec
Thickness 600± 25µm
Type/Dopant N/Phosphorus
Orientation[110]±0.5°
Resistivity>5,000 Ωcm
TTV<10µm
Bow/Warp<40µm
Primary Flat Location@[111]±<0.25°
Primary Flat Length 32.5± 2.5mm
Secondary Flat Location@[111]70.5° CW from primary flat
Front side finish [...]
2019-09-20meta-author
4H-SiC wafers are available for nitrogen vacancy(NV) color center research. For more wafer information, please contact our sales team: victorchan@powerwaywafer.com
1. Backgroud for Quantum Sensing Research on 4H-SiC
Quantum sensing technology, with its unique ability to utilize quantum mechanical properties such as quantum entanglement and quantum interference, [...]
2024-05-07meta-author
Low Temperature GaAs Test Report
https://www.powerwaywafer.com/low-temperature-gaas-2.html
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing [...]
2019-03-20meta-author