PAM XIAMEN offers (112) Orientation Silicon Wafers.
If you don’t see what you need then please email us your specs.
Item
Type/Dopant
Ori
Dia (mm)
Thck (μm)
Surf.
Resistivity Ωcm
Comment
PAM3026
n-type Si:P
[112-5.0° towards[11-1]] ±0.5°
6″
875 ±10
E/E
FZ >3,000
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips
PAM3027
n-type Si:P
[112-5° towards[11-1]] ±0.5°
6″
1,000 ±10
C/C
FZ >3,000
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, [...]
2019-02-22meta-author
The Development Trend of LED Wafer Chip Industry in 2018
Abstract
Since 2016, the LED industry has been in a period of rapid development, and by 2018, a new pattern has emerged. Throughout the entire LED industry chain, we can see that the LED wafer chip [...]
2018-07-31meta-author
PAM XIAMEN offers 8″ CZ semiconductor grade silicon wafer SSP
Growth Method: CZ
Diameter: 200.0±0.5mm
Type/Dopant: P/Boron
Orientation: (111) ±0.5°
Resistivity: <1Ωcm
Notch: SEMI Standard
Thickness: 1,000 ±25um
TTV <6um
Bow <60um
Warp <60um
Frontside Surface: Polished
Backside Surface: Etched
Particle ≦10@≧0.3um
Moreover, 8″CZ Red P doped wafer (dopant Red Phos) with resistivity<0.0016Ωcm is available. (PAM180413)
For more information, [...]
2021-03-18meta-author
PAM XIAMEN offers Polished silicon slab.
Size: 90X200mm
Thickness: 9±1mm
2 polished face 90 x 200mm
Flatness <1um
TTV <5um
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd [...]
2019-08-22meta-author
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Incipient plasticity in 4H-SiC during quasistatic nanoindentation
Published by:
Saurav Goel ;Jiwang Yan ;Xichun Luo ;Anupam Agrawald
a School of Mechanical and Aerospace [...]
2019-12-09meta-author
Layer structure of 703nm Laser
We can offer Layer structure of 703nm Laser as follows:
Layer
Composition
Thickness (um)
Doping(cm-3)
Cap
P+- GaAs
0.2
Zn:>1e19
Cladding
p – Al0.8Ga0.2As
1
Zn:1e18
Etch stop
GaInP
0.008
Zn:1e18
Top barrier
Al0.45Ga0.55As
0.09
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Barrier
Al0.45Ga0.55As
0.01
Undoped
Well
Al0.18Ga0.82As
0.004
Undoped
Bottom barrier
Al0.45Ga0.55As
0.09
Undoped
Cladding
n – Al0.8Ga0.2As
1.4
Si:1e18
Buffer
n – GaAs
0.5
Si:1e18
Substrate
n+ – GaAs
S :>1e18
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.