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2″ Silicon Wafer-11
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [110] 2″ 2000 P/P 1-10 1 F @ <1,-1,0> p-type Si:B [110] 2″ 350 P/E 0.1-1.0 PF<111> SF 109.5° p-type Si:B [110] 2″ 280 P/P 0.080-0.085 PF<111> SF 109.5° p-type Si:B [100] 2″ 500 P/P 1,300-8,000 SEMI Prime p-type Si:B [100] 2″ 500 P/P 1,300-2,600 SEMI Prime p-type Si:B [100] 2″ 250 P/P FZ 510-1,200 SEMI Prime p-type Si:B [100] 2″ 300 P/P ~150 SEMI Prime p-type Si:B [100] 2″ 300 P/P 90-120 SEMI Prime p-type Si:B [100] 2″ 300 P/P 70-80 SEMI Prime p-type Si:B [100] 2″ 1400 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 1500 P/P 6-8 Prime, NO Flats p-type Si:B [100] 2″ 3000 P/E 6-8 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 3000 P/E 4.9-5.3 Prime, NO Flats, Individual cst p-type Si:B [100] 2″ 300 P/E 1-10 SEMI Prime p-type Si:Ga [100] 2″ 350 P/P 1-5 SEMI Prime p-type Si:B [100] 2″ 500 P/E 1-2 SEMI [...]
80+1mm FZ Si Ingot-1
PAM XIAMEN offers 80+1mm FZ Si Ingot-1 FZ Si Ingot Diameter 80+1mm, N-type, <111>±2° Resistivity>3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
125mm Silicon Wafer
PAM XIAMEN offers 125mm Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity Thickness Surface Grade 125 N Phos CZ -100 1-20 43768 P/P PRIME 125 N Phos CZ -100 1-20 550-600 P/E/OX PRIME 125 N Phos CZ -100 1-20 575-625 P/E/WTOx 125 N Phos CZ -100 1-50 575-625 P/E/DTOx PRIME 125 N Phos CZ -100 1-50 575-625 P/E/Ni PRIME 125 P Boron CZ -100 1-20 43768 P/P PRIME 125 P Boron CZ -100 1-50 550-650 P/E PRIME 125 P Boron CZ -100 1-20 575-625 P/E/WTOx 125 P Boron CZ -100 1-50 575-625 P/E/DTOx PRIME 125 P Boron CZ -100 1-50 575-625 P/E/Ni PRIME 125 P Boron FZ -100 1000-5000 875-925 P/E PRIME 125 Single Wafer Shipper ePak Holds1Wafer PRIME 125 Shipping Cassette ePak Holds25Wafers Clean Room For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
INP INDIUM PHOSPHIDE CRYSTAL SUBSTRATES
PAM XIAMEN offers InP Indium Phosphide Crystal Substrates. Choose high-quality InP (Indium Phosphide) crystal substrates for sale at PAM XIAMEN Supplies. Our InP substrates come in many sizes and conductivity types. [...]
Electrical transportation and piezotronic-effect modulation in AlGaN/GaN MOS HEMTs and unpassivated HEMTs
Highlights • The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator. • The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device. • The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures. Abstract The metal-oxide-semiconductor [...]
The role of carbon and SiO2 in solid-state sintering of SiC
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc. And now we show one article example as follows, who bought our wafers or service: Article title: The role of carbon and SiO2 in solid-state sintering of SiC Published by: Eran Gross;Dana Benes Dahan;Wayne D. Kaplan. Department of [...]