Side view microphotograph of an electrode slice, depicting the structure of a nanowall/silicon/nanowall. Credit: Victor Krivchenko
Members of the D. V. Skobeltsyn Institute of Nuclear Physic and colleagues from the Faculty of Chemistry of the Lomonosov Moscow State University have developed a new silicon- and [...]
2017-09-18meta-author
1470 / 1550nm High Power Laser Single Chip
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
Option1:1.5w:
Item
Parameters
wavelength
1470/1550nm
power
1.5 W
Working current
4 A
Working voltage
1.4 V
Strip width
96 μm
size
1000*500*150 μm
Divergence angle
11/31 degrees
Photoelectric conversion efficiency
26%
Option2: 3w:
Item
Parameters
wavelength
1470/1550nm
power
3 W
Working current
9A
Working voltage
1.5V
Strip width
96 μm
size
2000*500*150 μm
Divergence angle
11/28 degrees
Photoelectric conversion [...]
2020-06-17meta-author
PAM XIAMEN offers MoTe2 crystal.
MoTe2 (Molybdenum Ditelluride) can crystallise in two dimensional sheets which can be thinned down to monolayers that are flexible and almost transparent. It is a semiconductor, and can fluoresce. It is part of a class of materials called transition [...]
2019-05-13meta-author
PAM XIAMEN offers Zirconium Substrate & Foil ( Polycrystalline ).
Zr – Polycrystalline Substrate: 10 x 10 x0.5 mm, One sides polished
Zr – Polycrystalline Metallic Foil: 0.08mm thick x 200mm Width x 400 mm Length
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-05-10meta-author
150mm 4H n-type SiC epi wafer with excellent uniformity and extremely low defect density is available. SiC epitaxial wafer refers to a silicon carbide wafer on which a single crystal film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a silicon [...]
2020-03-10meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[110] ±0.5°
3″
325
P/E
FZ 100-200
SEMI Prime
p-type Si:B
[100]
3″
380
P/E
FZ 7,000-10,000
SEMI Prime
p-type Si:B
[100]
3″
350
P/P
FZ 1-5
SEMI Prime
p-type Si:B
[100]
3″
160 ±10
P/P
FZ 0.5-10.0
SEMI Tes, Soft cst, Scratched, unsealed defects. Can be repolished for additional fee
p-type Si:B
[100]
3″
890 ±13
P/P
FZ 0.5-10.0
SEMIt, TTV<8μm
p-type Si:B
[111] ±0.5°
3″
380
P/E
FZ 8,000-10,000
SEMI TEST (has scratches), in hard cst
p-type Si:B
[111] ±0.5°
3″
475
P/E
FZ >4,400
SEMI Prime, TTV<5μm
p-type Si:B
[111] ±0.25°
3″
400
P/E
FZ >100
SEMI Prime
n-type Si:P
[100]
3″
380
P/P
FZ 7,000-18,000
SEMI Prime
n-type [...]
2019-03-06meta-author