PAM XIAMEN offers Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates.
Nb: SrTiO3, Niobium doped Strontium Titanate Crystal and Substrates
Main Parameters
Nb:SrTiO3
A
B
C
D
Nb Concentration (wt%)
Customized
0.7
0.5
0.05
Resistivity ohm-cm
Customized
0.007
0.05
0.08
Migration rates cm2/vs
Customized
8.5
8.5
6.5
Characteristics
Nb: SrTiO3 and SrTiO3 have a similar structure, but Nb: STO has an high electrical conductivity. Typical STO are insulators
Size
10×3, 10×5, 10×10, 15×15, 20×15, 20×20 mm
Ф15, Ф20, Ф [...]
2019-03-14meta-author
PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.
1. Specifications of SiC Ingots
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ [...]
2018-08-07meta-author
PAM XIAMEN offers SrLaAlO4 crystal.
SrLaAlO4 crystal is a promising substrate material for high Tc superconduct film and other oxide films to replace SrTiO3 crystal with better quality and lower cost. We produces SrLaAlO4 crystal and substrate in house up to 35 mm. We [...]
2019-05-14meta-author
PAM XIAMEN offers high-quality BaTiO3.
BaTiO3 Substrates (001)
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade with single domain
BaTiO3 (001) 5x5x1.0 mm, 1SP, Substrate grade(with domains)
BaTiO3 (001) 5x5x1.0 mm, 2SP, Substrate grade(with domains)
BaTiO3 (001) 10x10x0.5 mm, 1SP, Substrate grade (with domains)
BaTiO3 [...]
2019-04-17meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
50.8
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
50.8
P
Boron
FZ
-100
>1000
200-500
P/P
PRIME
50.8
P
Boron
FZ
-100
>3000
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-100
.001-.005
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
.005-.02
250-300
P/E
PRIME
50.8
P
Boron
FZ
-100
>3000
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/DTOx
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/Ni
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/OX
PRIME
50.8
P
Boron
CZ
-100
1-20
250-300
P/E/WTOx
50.8
P
Boron
CZ
-100
.001-.005
275-325
P/E
PRIME
50.8
P
Boron
CZ
-100
450-500
P/P
PRIME
50.8
P
Boron
FZ
-100
4000-10000
475-525
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
500-550
P/E
PRIME
50.8
P
Boron
CZ
-100
1-20
950-1000
P/P
PRIME
50.8
P
Boron
CZ
-100
1-20
1000-1050
P/E
PRIME
50.8
P
Boron
CZ
-111
1-20
225-275
P/P
PRIME
50.8
P
Boron
CZ
-111
1-20
250-300
P/E
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-02-27meta-author
PAM XIAMEN offers LiF crystal.
LiF (100) 10x10x1.0mm, 1SP
LiF (100) 10x10x1.0mm, 2SP
LiF (111) 10x10x1.0mm, 1SP
LiF (111) 10x10x1.0mm, 2SP
LiF (110) 10x10x1.0mm, 1SP
We also can offer LiF polycrystal (PAM161011-LIF):
Diameter=15mm
Length=25mm
Purity>99.99%
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
Found in [...]
2019-05-08meta-author