PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111] ±0.5°
4″
1000
P/E
<0.01
SEMI Prime
n-type Si:P
[110] ±0.5°
4″
525
P/P
20-80
SEMI Prime @ [111] – Secondary 70.5° CW from Primary
n-type Si:P
[110] ±0.5°
4″
500
P/P
3-10
SEMI Prime, TTV<10μm, Bow/ Warp<30μm, Primary Flat @ [111]±0.2°, Secondary @ [111] 70.5° CW from Primary, in Empak cassettes of 7 wafers
n-type Si:P
[110] ±0.3°
4″
525
P/P
3-10
SEMI [...]
2019-03-05meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:Sb
[211] ±0.5°
4″
1,500 ±15
P/P
0.01-0.02
SEMI Prime, TTV<1μm
n-type Si:Sb
[211] ±0.5°
4″
1600
C/C
0.01-0.02
SEMI Test, Wafers can be polished for additional fee
n-type Si:P
[111]
4″
1200
P/P
35-85
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
1500
P/E
>20 {24-29}
SEMI Prime, TTV<5μm, in Empak cassettes of 2 wafers
n-type Si:P
[111] ±0.5°
4″
250
P/E
18-25
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
500
P/P
11-15
SEMI Prime, Both-sides Epi Ready polished
n-type Si:P
[111]
4″
280
P/E
1.3-2.7
SEMI Prime
n-type Si:P
[111] ±0.5°
4″
280
P/E
1.3-2.7
SEMI Prime
n-type [...]
2019-03-05meta-author
PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates.
Single crystal SrTiO3 doped with 0.05 wt% Fe
Specifications:
Crystal Structure:Cubic
Growth Method:Vernuil Method
Lattice Parameter:a=3.905Å
Fe Doping Concentrations:0.05%
Melting Point:2080C
Density:5.122 g/ccm
Hardness:6-6.5 Mohs
Thermal expansion:10.3 x 10^-6/K
Dielectric Constant:5.2
Dielectric Loss: ~5×10^-4(300K) ~3×10^-4(77K)
Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request
Typical thickness:0.5mm or 1.0mm
Orientations:<100>、<110>、<111>
Miscut:0.5 degree
Surface Polishing:single or double [...]
2019-03-14meta-author
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate
1.1 Semi-insulated GaAs Substrate PAM190425-GAAS
Parameter
Customer’sRequirements
Guaranteed/Actual Values
UOM
GrowthMethod:
VGF
VGF
—
ConductType:.
S-I-N
S-I-N
—
Dopant:
c doped
c [...]
2020-05-26meta-author
PAM XIAMEN offers MoS2 crystal.
As a transition metal dichalcogenide, MoS2 is composed of two-dimensional layers stacked in the vertical direction. It possesses some of graphene’s desirable qualities (such as mechanical strength and electrical conductivity), and can emit light, opening possible applications such as [...]
2019-05-13meta-author
PAM-XIAMEN offers 950nm InGaAs quantum well laser diode wafers. In the application of optoelectronic devices, the InGaAs / GaAs strained quantum well (QW) structure is one of the research hotspots, and the emission band of the InGaAs / GaAs strained quantum well covers the [...]
2019-03-13meta-author