PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-08-22meta-author
Xiamen Powerway Advanced Material Co.,Ltd. offers monocrystal or polycrystalline150mm Germanium (100) or (111) substrates for optical application or for epi-growth in microelectronics. You can buy germanium substrate in following specifications:
1. Gemanium Substrate Specifications
No.1 Optically Polished Germanium Substrates
PAM211025-GE
Sl No’
Specifications
Value
1
Material
Germanium (Ge) Optical grade
2
Crystalline form
Polycrystalline / Monocrystalline
3
Shape
Circular Flat
4
Diameter
25 mm [...]
PAM XIAMEN offers 4″ FZ Intrinsic Si wafer
SEMI-PRIME, FZ, 4″, Intrinsic/Undoped, <1-0-0>, >10,000 ohm-cm, 500±15um, SSP, TTV<5um, Bow<30um, Warp <30um,
Flats: 1 Flat.
Particle @0.3µm, <20count
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2021-03-18meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
1000
P/E
0.001-0.005
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
500
P/P
<0.01 {0.00087-0.00100}
SEMI Prime
p-type Si:Ga
Poly.
2″
C/C
0.024-0.036
Gallium doped Concentrate (each with measured Gallium content)
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime, 1 Flat @ [1,-1,0], in hard cst
n-type Si:P
[110]
2″
280
P/E
19-33
SEMI Prime,
n-type Si:P
[110] ±0.5°
2″
300
P/E
1-5
SEMI Prime, , TTV<5μm
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:Sb
[110]
2″
375
P/E
0.005-0.020
SEMI
n-type Si:P
[100]
2″
400
P/P
210-880
SEMI Prime,
n-type Si:P
[100]
50mm
280
P/E
130-280
SEMI Prime,
n-type Si:P
[100]
2″
300
P/P
33-48
SEMI TEST [...]
2019-03-07meta-author
New graphene fabrication method uses silicon carbide template
Graphene transistors. Georgia Tech researchers have fabricated an array of 10,000 top-gated graphene transistors, believed to be the largest graphene device density reported so far.
(PhysOrg.com) — Researchers at the Georgia Institute of Technology have developed a new [...]
2018-05-17meta-author
PAM XIAMEN offers 4″ Silicon Wafer-19 as follows, while silicon wafer list includes, but not limited to the following.
Silicon wafers, P/E 4″Ø×400±25µm,
FZ p-type Si:B[111]±0.5°, Ro > 10,000 Ohmcm,
One-side-polished, back-side etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000µs.
For more polished wafer specification, please [...]
2019-11-26meta-author