PAM XIAMEN offers Fe SrTiO3 Iron Doped Strontium Titanate Crystal Substrates.
Single crystal SrTiO3 doped with 0.05 wt% Fe
Specifications:
Crystal Structure:Cubic
Growth Method:Vernuil Method
Lattice Parameter:a=3.905Å
Fe Doping Concentrations:0.05%
Melting Point:2080C
Density:5.122 g/ccm
Hardness:6-6.5 Mohs
Thermal expansion:10.3 x 10^-6/K
Dielectric Constant:5.2
Dielectric Loss: ~5×10^-4(300K) ~3×10^-4(77K)
Sizes Available:10×3m、10×5m、10×10mm、15×15mm、20×15mm can be customized upon request
Typical thickness:0.5mm or 1.0mm
Orientations:<100>、<110>、<111>
Miscut:0.5 degree
Surface Polishing:single or double [...]
2019-03-14meta-author
PAM XIAMEN offers Silicon-Nitride on Corning 7980.
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x10x0.5mm
Silicon Nitride Film (LPCVD) on Corning 7980, Film thickness: 1.3um ,10x5x0.5mm
For more information, please visit [...]
2019-04-29meta-author
III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has [...]
2022-07-29meta-author
The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and [...]
2019-11-05meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
4″
300
P/P
5-10
SEMI Test, Scratched and unsealed. Can be re-polished for extra fee
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (in Opened cassette), 2Flats
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI TEST (with bad surface)
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Prime, hard cst, Back-side slightly darker than normal
p-type Si:B
[100]
4″
380
P/E
5-10
SEMI Test, Dirty wafers, can be cleaned for extra fee
p-type Si:B
[100]
4″
380
BROKEN
5-10
Broken P/E Wafers, [...]
2019-03-05meta-author
PAM XIAMEN offers 6″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
6″Øx675μm
n- Si:P[100]
0.001-0.002
P/EOx
3.2 ±0.2
n- Si:P
0.32-0.46
n+/n++
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
2019-03-08meta-author