PAM XIAMEN offers 8″Silicon As-cut Wafer
According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]
2020-06-12meta-author
(LT-GaAs)Experimental Results
PAM XIAMEN offers Low Temperature GaAs.
Preparation for pump & probe measurement
Reflectance spectra measurement : we could not observe the reflectance peak.
PL spectra measurement : PL spectra were observed between 810 and 845 nm.
Pump & probe measurement (10 K)
・We have observed 0.6-1.6 picosecond decay [...]
2019-03-15meta-author
PAM XIAMEN offers 4″CZ Epitaxial Prime Silicon Wafer.
4″ Si epi wafer
Growth Method: CZ
100 +/- 0.5 mm diameter silicon
Orientation <111> 4deg off
P Type Boron doped 0.002 – 0.003 ohm cm
Front side polished – Epi ready
thickness 525 +/-25 um [...]
2019-07-05meta-author
Targeted Stress LPCVD Nitride
PAM XIAMEN offers Targeted Stress LPCVD Nitride
Targetted Stress LPCVD nitride process should be used when you need to customize film stress for your respective applications.
Please provid us with your application for an immediate quote.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-02-12meta-author
PAM XIAMEN offers 6″FZ Silicon Wafer-1
Silicon wafers, per SEMI Prime, P/E
6″Ø×675±25µm
FZ p-type Si:B[110]±0.5°
Ro > 1,000 Ohmcm,
One-sidepolished, backside Alkaline etched
2 Flats
Sealed in Empak or equivalent cassette
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-11meta-author
PAM-XIAMEN, a leading SiC epitaxial wafer manufacturer, can offer 4H SiC epitaxial wafers for MOS fabrication, which refer to a single crystal film(epitaxial layer) with certain requirements and the same crystal growing on a silicon carbide substrate. The SiC epitaxial wafer market size is [...]
2021-05-17meta-author