Highlights
•Effects of atomic step width on the removal of sapphire and SiC wafers are studied.
•The reason of effects of step width on the removal and the model are discussed.
•CMP removal model of hexagonal wafer to obtain atomically smooth surface is proposed.
•The variations of atomic [...]
2015-10-28meta-author
Computer modeling of surface interactions and contamin
Highlights
•
Dynamics of contaminant removal from the surface of micro/nanotrench is simulated.
•
The trench is rectangular and made of one or two different materials.
•
Various diffusivities and surface characteristics are considered in the model.
•
In multimaterial trench, cleaning dynamics strongly depends on [...]
PAM XIAMEN offers 3″ Silicon Oxide Wafer
3″ Silicon Oxide Wafer
Diameter (mm): 76mm
Grade: Prime
Growth: CZ
Type/Dopant: any
Orientation: 100
Resistivity (Ohm-cm): any
Thickness (µm): 500±25μm
Tolerance (µm): any
Surface Finish: SSP
Flats: SEMI-Std.
TTV < (µm): any
Bow < (µm): any
Warp < (µm): any
Particles [...]
2020-04-24meta-author
Equipment Shortages Pushes Back Sharp’s OLED Production
Sharp might be adjusting its OLED panel production plan, and move the production plant in Taiwan to a joint venture factory with Foxconn in Japan, reported Nikkei Asian Review.
The joint venture with Foxconn is a 10th generation display [...]
2016-08-30meta-author
Safety Data Sheet of Indium Phosphide Wafer
Product Name:
Indium Phosphide
Date of Issue:
SDS No.:
PAM-001
2017/10/15
1.PRODUCT AND COMPANY IDENTIFICATION
Product Name: Indium Phosphide
Chemical Formula: InP Mol. Wt. 145.79
Manufacturer: Powerway Wafer Co.,Limited
Address:#506B, Henghui Business Center,No.77,Lingxia Nan Road
High Technology Zone, Huli, Xiamen,361000
2.HAZARD IDENTIFICATION
Toxic by inhalation and if swallowed.Gives rise to hazardous [...]
2020-08-04meta-author
The Gallium Nitride Era is Coming
Because of the smaller form factor, better thermal performance, and higher efficiency of gallium nitride (GaN) devices, the industry has been looking forward to it for a long time. In recent years, as GaN-on-SiC devices have begun to be [...]
2018-08-09meta-author