GaAs Hall Chip

PAM-XIAMEN can supply GaAs Hall chip, which are shipped in bulk (1000pcs per pack). For more chip parameters please see as follows:

1. Electrical Characteristics (Ta=25℃) of GaAs PAM-HS-501A

Item	Symbol	Conditions	Min	Typ	Max	Unit
Output Hall voltage	VH	Constant voltage drive B=500G, Vc=6V	58		75	mV
Input resistance	Rin	B=0G， Ic=0.1mA	670		800	ohm
Output resistance	ROUT	B=0G， Ic=0.1mA	670		800	ohm
Offset voltage	VOS(Vu)	B=0G, Vc=6V	-8		+8	mV
Offset voltage	VOS(Vu)	B=0G, Vc=3V	-4		+4	mV
Temp. coefficient of VH	αVH	T1=25℃, T2=125℃ B=500G, Ic=5mA			-0.06	%/℃
Temp. coefficient of Rin	αRin	T1=25℃, T2=125℃ B=0G, Ic=0.1mA			0.3	%/℃
Linearity	△K	B1=1000G, B2=5000G, Ic=5mA			2	%

Notes

1) V_H=VHM—Vu; (VHM is the measured value of Hall output voltage at 500G; Vu is offset voltage)

2)

2. Absolute Maximum Ratings of GaAs Hall Chip

Item	Symbol	Conditions	Limit	Unit
Max input voltage	Vc	25 ℃ constant voltage drive	10	V
Max input power	PD		150	mW
Operating temp. range	Topr		-40~+125	℃
Storage temp. range	TSTG		-40~+150	℃

 

3. GaAs Hall Chip Dimensional Drawing (Unit: mm)

4. Characteristic Curves of GaAs Hall Chip

For more information, please contact us email at [email protected] and [email protected].