GALLIUM NITRIDE GAN TEMPLATE ON SAPPHIRE 0001 N-TYPE P-TYPE SI

GALLIUM NITRIDE GAN TEMPLATE ON SAPPHIRE 0001 N-TYPE P-TYPE SI

PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):

1. Wafer List:

2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single side polished or double side polished.

2 inch N-Type Undoped GaN 5 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

2 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

2 inch Mg-doped P-type Gallium Nitride GaN Template on Sapphire, single side polished.

4 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire, single side polished or double side polished.

4 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished or double side polished.

4 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

4 inch N-Type P type GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished.

6 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire

6 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001).

2. Parameters for GaN Template on Sapphire

Parameters nGaN uGaN template PGaN
Size 2″, 4″, 6″
Orientation C-axis(0001)+/-1°
Si doping level 1E16/cm3 – 3E19/cm3
Electron mobility > 600 cm2/Vs @ 1E16/cm3
> 200 cm2/Vs @ 5E18/cm3
Unintentionally-doped GaN > 3 µm
Resistivity < 0.5 Ω•cm
Background carrier density < 1 × 1017/cm3
(002) XRC < 300″ for planar and < 250″ for PSS
(102) XRC < 350″ for planar and < 250″ for PSS
Dislocation density Planar: < 5 × 108/cm2
PSS: < 1 × 108/cm2
Mg doping level 1E18/cm3 – 1E20/cm3
Hole concentration ~ 3E17/cm3 @ [Mg]-3E19/cm3
Hole mobility ~ 10 cm2/Vs
Substrate Sapphire
Substrate Thickness 2″ 430 μm
100 mm 625 μm
150 mm 1 mm/1.3 mm

 

3. Detail Specification Example for 2inch p type GaN on sapphire, SSP:

2″ dia, p-type, Mg doped , PAM190909-GAN-P
Total thickness :5um+/-0.5um
Orientation: C-axis(0001)+/-1deg.
Substrate Structure:
p-GaN(>=2.0um)
u-GaN(2.0-2.5um)
GaN Buffer layer
Sapphire(430um,SSP)
EPD<2E9/cm2
XRD(102)<xxxarc.sec
XRD(002)<xxxarc.sec
Surface Finish :Single Side Polished,epi-ready
Usable Area ≥ 90 %

For more information, please contact us email at [email protected] and [email protected].

 

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