GALLIUM NITRIDE GAN TEMPLATE ON SAPPHIRE 0001 N-TYPE P-TYPE SI

GALLIUM NITRIDE GAN TEMPLATE ON SAPPHIRE 0001 N-TYPE P-TYPE SI

PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):

1. Wafer List:

2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single side polished or double side polished.

2 inch N-Type Undoped GaN 5 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

2 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

2 inch Mg-doped P-type Gallium Nitride GaN Template on Sapphire, single side polished.

4 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire, single side polished or double side polished.

4 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished or double side polished.

4 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.

4 inch N-Type P type GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished.

6 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire

6 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001).

2. Parameters for GaN Template on Sapphire

Parameters nGaN uGaN template PGaN
Size 2″, 4″, 6″
Orientation C-axis(0001)+/-1°
Si doping level 1E16/cm3 – 3E19/cm3
Electron mobility > 600 cm2/Vs @ 1E16/cm3
> 200 cm2/Vs @ 5E18/cm3
Unintentionally-doped GaN > 3 µm
Resistivity < 0.5 Ω•cm
Background carrier density < 1 × 1017/cm3
(002) XRC < 300″ for planar and < 250″ for PSS
(102) XRC < 350″ for planar and < 250″ for PSS
Dislocation density Planar: < 5 × 108/cm2
PSS: < 1 × 108/cm2
Mg doping level 1E18/cm3 – 1E20/cm3
Hole concentration ~ 3E17/cm3 @ [Mg]-3E19/cm3
Hole mobility ~ 10 cm2/Vs
Substrate Sapphire
Substrate Thickness 2″ 430 μm
100 mm 625 μm
150 mm 1 mm/1.3 mm

 

3. Detail Specification Example for 2inch p type GaN on sapphire, SSP:

2″ dia, p-type, Mg doped , PAM190909-GAN-P
Total thickness :5um+/-0.5um
Orientation: C-axis(0001)+/-1deg.
Substrate Structure:
p-GaN(>=2.0um)
u-GaN(2.0-2.5um)
GaN Buffer layer
Sapphire(430um,SSP)
EPD<2E9/cm2
XRD(102)<xxxarc.sec
XRD(002)<xxxarc.sec
Surface Finish :Single Side Polished,epi-ready
Usable Area ≥ 90 %

4. FAQ of GaN Template

Q: I’d be pleased if you would provide us a price quote for the following wafers from PAM-XIAMEN:

2″ semi-insulating GaN template on C-plane sapphire – 25 units, singly packed.
2″ n-doped GaN template on C-plane sapphire – 25 units, singly packed.
All templates must be MOCVD-grown epi-ready, intended for epitaxy straight out of the box with no further cleaning necessary beyond thermal treatment.

I would be grateful if you would include the following information of GaN template:

Thickness of GaN (should be 3-5 um)

Dislocation density

XRD rocking curve width of reflections 002, 102, 006 (if available)
Wafer bowing

Surface roughness (incl. the area over which the roughness value is taken)

Carrier concentration

Resistivity

A microscope picture of a typical surface

A: 2″ semi-insulating GaN template on C-plane sapphire – 25 units, singly packed.

2″ dia, Semi-insulating, Fe Doped

Thickness : 1.8um

Orientation: C-axis(0001)+/-1.0o

Resistivity(300K):>10^5ohm.cm

Substrate Structure:GaN on Sapphire(0001).

Single Side Polished, Epi-ready

XRD(102)<360arcsec

XRD(002)<300arcsec

AFM: please contact our sales team [email protected]r.com for the AFM diagram(190808).

2″ n-doped GaN template on C-plane sapphire – 25 units, singly packed.

1/GaN on sapphire, n type

2″ dia, N -type, Si doped or undoped.

Thickness : 4um+/-1um

Orientation: C-axis(0001)+/-1.0o

Resistivity(300K):<0.5 ohm.cm

Dislocation Density: <5×10^8 cm-2

Substrate Structure:GaN on Sapphire(0001). Single Side Polished, Epi-ready,with atomic steps

Carrier concentration:~E18

powerwaywafer

For more information, please contact us email at [email protected] and [email protected].

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