PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single side polished or double side polished.
2 inch N-Type Undoped GaN 5 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
2 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
2 inch Mg-doped P-type Gallium Nitride GaN Template on Sapphire, single side polished.
4 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire, single side polished or double side polished.
4 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished or double side polished.
4 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
4 inch N-Type P type GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished.
6 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire
6 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001).
2. Parameters for GaN Template on Sapphire
| Parameters | nGaN | uGaN template | PGaN | |
| Size | 2″, 4″, 6″ | |||
| Orientation | C-axis(0001)+/-1° | |||
| Si doping level | 1E16/cm3 – 3E19/cm3 | – | – | |
| Electron mobility | > 600 cm2/Vs @ 1E16/cm3 > 200 cm2/Vs @ 5E18/cm3 |
– | – | |
| Unintentionally-doped GaN | – | > 3 µm | – | |
| Resistivity | – | < 0.5 Ω•cm | – | |
| Background carrier density | – | < 1 × 1017/cm3 | – | |
| (002) XRC | – | < 300″ for planar and < 250″ for PSS | – | |
| (102) XRC | – | < 350″ for planar and < 250″ for PSS | – | |
| Dislocation density | – | Planar: < 5 × 108/cm2 PSS: < 1 × 108/cm2 |
– | |
| Mg doping level | – | – | 1E18/cm3 – 1E20/cm3 | |
| Hole concentration | – | – | ~ 3E17/cm3 @ [Mg]-3E19/cm3 | |
| Hole mobility | – | – | ~ 10 cm2/Vs | |
| Substrate | Sapphire | |||
| Substrate Thickness | 2″ | 430 μm | ||
| 100 mm | 625 μm | |||
| 150 mm | 1 mm/1.3 mm | |||
3. Detail Specification Example for 2inch p type GaN on sapphire, SSP:
2″ dia, p-type, Mg doped , PAM190909-GAN-P
Total thickness :5um+/-0.5um
Orientation: C-axis(0001)+/-1deg.
Substrate Structure:
p-GaN（>=2.0um）
u-GaN（2.0-2.5um）
GaN Buffer layer
Sapphire（430um，SSP）
EPD<2E9/cm2
XRD(102)<xxxarc.sec
XRD(002)<xxxarc.sec
Surface Finish :Single Side Polished,epi-ready
Usable Area ≥ 90 %
For more information, please contact us email at [email protected] and [email protected].