PAM XIAMEN offers Gallium Nitride (GaN) Template grown on Sapphire. C plane (0001) GaN on flat Sapphire and GaN on PSS are available, and these GaN templates includes N-type, P-type or semi-insulating (SI):
1. Wafer List:
2 inch N type/Si doped 5um Gallium Nitride GaN Template on Sapphire, single side polished or double side polished.
2 inch N-Type Undoped GaN 5 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
2 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
2 inch Mg-doped P-type Gallium Nitride GaN Template on Sapphire, single side polished.
4 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire, single side polished or double side polished.
4 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished or double side polished.
4 inch Semi-Insulating Fe-doped GaN 2 um Gallium Nitride Template on Sapphire (0001), single side polished or double side polished.
4 inch N-Type P type GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001), single side polished.
6 inch N-type Si-doped 5um Gallium Nitride Template on Sapphire
6 inch N-Type Undoped GaN 5 um Gallium Nitride Epitaxial Template on Sapphire (0001).
2. Parameters for GaN Template on Sapphire
| Parameters | nGaN | uGaN template | PGaN | |
| Size | 2″, 4″, 6″ | |||
| Orientation | C-axis(0001)+/-1° | |||
| Si doping level | 1E16/cm3 – 3E19/cm3 | – | – | |
| Electron mobility | > 600 cm2/Vs @ 1E16/cm3 > 200 cm2/Vs @ 5E18/cm3 |
– | – | |
| Unintentionally-doped GaN | – | > 3 µm | – | |
| Resistivity | – | < 0.5 Ω•cm | – | |
| Background carrier density | – | < 1 × 1017/cm3 | – | |
| (002) XRC | – | < 300″ for planar and < 250″ for PSS | – | |
| (102) XRC | – | < 350″ for planar and < 250″ for PSS | – | |
| Dislocation density | – | Planar: < 5 × 108/cm2 PSS: < 1 × 108/cm2 |
– | |
| Mg doping level | – | – | 1E18/cm3 – 1E20/cm3 | |
| Hole concentration | – | – | ~ 3E17/cm3 @ [Mg]-3E19/cm3 | |
| Hole mobility | – | – | ~ 10 cm2/Vs | |
| Substrate | Sapphire | |||
| Substrate Thickness | 2″ | 430 μm | ||
| 100 mm | 625 μm | |||
| 150 mm | 1 mm/1.3 mm | |||
3. Detail Specification Example for 2inch p type GaN on sapphire, SSP:
2″ dia, p-type, Mg doped , PAM190909-GAN-P
Total thickness :5um+/-0.5um
Orientation: C-axis(0001)+/-1deg.
Substrate Structure:
p-GaN（>=2.0um）
u-GaN（2.0-2.5um）
GaN Buffer layer
Sapphire（430um，SSP）
EPD<2E9/cm2
XRD(102)<xxxarc.sec
XRD(002)<xxxarc.sec
Surface Finish :Single Side Polished,epi-ready
Usable Area ≥ 90 %
4. FAQ of GaN Template
Q: I’d be pleased if you would provide us a price quote for the following wafers from PAM-XIAMEN:
2″ semi-insulating GaN template on C-plane sapphire – 25 units, singly packed.
2″ n-doped GaN template on C-plane sapphire – 25 units, singly packed.
All templates must be MOCVD-grown epi-ready, intended for epitaxy straight out of the box with no further cleaning necessary beyond thermal treatment.
I would be grateful if you would include the following information of GaN template:
Thickness of GaN (should be 3-5 um)
Dislocation density
XRD rocking curve width of reflections 002, 102, 006 (if available)
Wafer bowing
Surface roughness (incl. the area over which the roughness value is taken)
Carrier concentration
Resistivity
A microscope picture of a typical surface
A: 2″ semi-insulating GaN template on C-plane sapphire – 25 units, singly packed.
2″ dia, Semi-insulating, Fe Doped
Thickness : 1.8um
Orientation: C-axis(0001)+/-1.0o
Resistivity(300K):>10^5ohm.cm
Substrate Structure:GaN on Sapphire(0001).
Single Side Polished, Epi-ready
XRD(102)<360arcsec
XRD(002)<300arcsec
AFM: please contact our sales team victorchan@powerwaywafer.com for the AFM diagram(190808).
2″ n-doped GaN template on C-plane sapphire – 25 units, singly packed.
1/GaN on sapphire, n type
2″ dia, N -type, Si doped or undoped.
Thickness : 4um+/-1um
Orientation: C-axis(0001)+/-1.0o
Resistivity(300K):<0.5 ohm.cm
Dislocation Density: <5×10^8 cm-2
Substrate Structure:GaN on Sapphire(0001). Single Side Polished, Epi-ready,with atomic steps
Carrier concentration:~E18
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.