PAM-XIAMEN Offers High Purity Semi-Insulating SiC substrate
Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-Insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”&6” is on mass production by PVT. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer High Purity Semi-Insulating SiC substrate to our customers. 4H Semi-Insulating Silicon Carbide (SiC) substrates are available in on-axis orientation. From epitaxy process in our research, we found micropipe density normally is not main obstacle to grow high quality epi layers, instead, carbon inclusions because a problem, hence, we focus on control or remove wafer without or smaller carbon inclusions, so for research grade and production grade HPSI SIC, it can ensure high quality heteroepitaxy such as AlGaN/GaN structure”. Because of High Purity without any dopants, the substrate material keep high resistivity with good uniformity.
1.Wafer List:
| Item Number | Diameter | Type | Orientation | Thickness | Resistivity(Ohm-cm) | Grade |
| S4H-150-SI-PWAM-500-D | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-150-SI-PWAM-500-R | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-150-SI-PWAM-500-A | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-100-SI-PWAM-500-D | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-100-SI-PWAM-500-R | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-100-SI-PWAM-500-A | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-76-SI-PWAM-350-D | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-76-SI-PWAM-350-R | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-76-SI-PWAM-350-A | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-51-SI-PWAM-350-D | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-51-SI-PWAM-350-R | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-51-SI-PWAM-350-A | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Production Grade |
2. Specification of HPSI SiC Substrate
2-1 4H HPSI (HIGH PURITY SEMI-INSULATING) SIC WAFER SPECIFICATION,2”
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-350 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (350 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI), undoped |
| Dopant | Undoped |
| Resistivity (RT) | >1E7 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| <span “=”” style=”font-size: 10pt;”> | C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
2-2 4H HPSI (HIGH PURITY SEMI-INSULATING) SIC WAFER SPECIFICATION,3”
| SUBSTRATE PROPERTY | S4H-76-N-PWAM-350 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (76.2 ± 0.38) mm |
| Thickness | (350 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI) |
| Dopant | Undoped |
| Resistivity (RT) | >1E7Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| TTV/Bow /Warp | ＜25μm |
| Surface Orientation | <0001>± 0.5° |
| Primary flat orientation | <11-20>±5.0° |
| Primary flat length | 22.22 mm±3.17mm |
| 0.875″±0.125″ | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| Primary flat length | C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 11.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Scratch | None |
| Usable area | ≥ 90 % |
| Edge exclusion | 2mm |
2-3 4H HPSI (HIGH PURITY SEMI-INSULATING) SIC WAFER SPECIFICATION,4”
| SUBSTRATE PROPERTY | S4H-100-SI-PWAM-500 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (100 ± 0.5) mm |
| Thickness | (500 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI) |
| Dopant | Undoped |
| Resistivity (RT) | >1E7 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A≤5cm-2 B≤15cm-2 C≤50cm-2 D≤100cm-2 |
| TTV/Bow /Warp | TTV＜10μm;TTV＜ 25μm;WARP＜45μm |
| Surface Orientation | <0001>± 0.5° |
| Primary flat orientation | <11-20>±5.0° |
| Primary flat length | 32.50 mm±2.00mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 18.00 ± 2.00 mm |
| Surface Finish | Double face polished |
| Packaging | Single wafer box or multi wafer box |
| Scratches | – |
| Cracks | None |
| Usable area | ≥ 90 % |
| Edge exclusion | 2mm |
2-4 4H HPSI (HIGH PURITY SEMI-INSULATING) SIC WAFER SPECIFICATION,6”
| SUBSTRATE PROPERTY | S4H-150-SI-PWAM-500 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (150 ± 0.5) mm |
| Thickness | (500 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI) |
| Dopant | Undoped |
| Resistivity (RT) | >1E7 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A≤5cm-2 B≤15cm-2 C≤50cm-2 D≤100cm-2 |
| TTV/Bow /Warp | TTV＜10μm;BOW＜ 40μm;WARP＜60μm |
| Surface Orientation | <0001>± 0.5° |
| Primary flat orientation | <11-20>±5.0° |
| Primary flat length | 47.50 mm±2.00mm |
| Secondary flat length | N/A |
| Surface Finish | Double face polished |
| Packaging | Single wafer box or multi wafer box |
| Scratches | – |
| Cracks | None |
| Usable area | ≥ 90 % |
| Edge exclusion | 2mm |
3. Fluorescence PL diagram of Vsi
See below Fluorescence PL diagram of Vsi, tested by a 2inch,4H, semi-insulating SiC.
Fluorescence PL diagram of Vsi
For all information about SiC wafer, please visit our website: https://www.powerwaywafer.com/sic-wafer/sic-wafer-substrate.htm
send us email at victorchan@powerwaywafer.com