Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of High Purity Semi-insulating SiC substrate and other related products and services announced the new availability of size 2”&3”&4”&6” is on mass production by PVT. This new product represents a natural addition to PAM-XIAMEN’s product line. Dr. Shaka, said, “We are pleased to offer High Purity Semi-insulating SiC wafer to our customers. 4H Semi-insulating Silicon Carbide (SiC) substrate is available in on-axis orientation. From epitaxy process of semi-insulating silicon carbide wafers in our research, we found micropipe density normally is not main obstacle to grow high quality epi layers, instead, carbon inclusions because a problem, hence, we focus on control or remove wafer without or smaller carbon inclusions, so for research grade and production grade high purity Semi-insulating SiC substrate, it can ensure high quality heteroepitaxy such as AlGaN/GaN structure”.
1. High Purity Semi Insulating SiC Wafer List:
| Item Number | Diameter | Type | Orientation | Thickness | Resistivity(Ohm-cm) | Grade |
| S4H-150-SI-PWAM-500-D | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-150-SI-PWAM-500-R | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-150-SI-PWAM-500-A | 150mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-100-SI-PWAM-500-D | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-100-SI-PWAM-500-R | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-100-SI-PWAM-500-A | 100mm | HPSI | On-axis | 500µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-76-SI-PWAM-350-D | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-76-SI-PWAM-350-R | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-76-SI-PWAM-350-A | 76.2mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Production Grade |
| S4H-51-SI-PWAM-350-D | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Dummy Grade |
| S4H-51-SI-PWAM-350-R | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Research Grade |
| S4H-51-SI-PWAM-350-A | 50.8mm | HPSI | On-axis | 350µm +/-25µm | ≥ 1E7 | Production Grade |
2. Specification of High Purity Semi-Insulating SiC Substrate
2-1 HIGH PURITY SEMI-INSULATING 4H-SIC WAFER SPECIFICATION,2”
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-350 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (350 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI), undoped |
| Dopant | Undoped |
| Resistivity (RT) | >1E7 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| <span “=”” style=”font-size: 10pt;”> | C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
2-2 HIGH PURITY SEMI-INSULATING 4H-SIC SUBSTRATE SPECIFICATION,3”
| SUBSTRATE PROPERTY | S4H-76-N-PWAM-350 |
| Description | A/B Production Grade C/D Research Grade D Dummy Grade 4H SiC Substrate |
| Polytype | 4H |
| Diameter | (76.2 ± 0.38) mm |
| Thickness | (350 ± 25) μm |
| Type | High Purity Semi-Insulating(HPSI) |
| Dopant | Undoped |
| Resistivity (RT) | >1E7Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | A<30 arcsec B/C/D <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| TTV/Bow /Warp | ＜25μm |
| Surface Orientation | <0001>± 0.5° |
| Primary flat orientation | <11-20>±5.0° |
| Primary flat length | 22.22 mm±3.17mm |
| 0.875″±0.125″ | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° |
| Primary flat length | C-face:90° ccw. from orientation flat ± 5° |
| Secondary flat length | 11.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Scratch | None |
| Usable area | ≥ 90 % |
| Edge exclusion | 2mm |
2-3 4H HIGH PURITY SEMI-INSULATING SIC WAFER SPECIFICATION,4”
| SUBSTRAIE PROPERTY | A Grade | B Grade | C Grade |
| Diameter | 100.0 mm + 0.0/-0.5 mm | ||
| Surface orientation | {0001} ± 0.2° | ||
| Primary flat orientation | [11-20] ± 5° | ||
| Secondary flat orientation | Silicon face up: 90° CW. from Prime flat ±5.0° | ||
| Primary flat length | 32.5 mm ± 2.0 mm | ||
| Secondary flat length | 18.0 mm ± 2.0 mm | ||
| Surface Roughness | Si-face Ra≤0.2 nm | ||
| Thickness | 500.0μm ± 25.0μm | ||
| TTV | ≤10μm | ||
| C10mm’LrV C10mm’ | ≤3μm | ≤5μm | |
| Warp | ≤35μm | ≤45μm | |
| Bow(Absolute) | ≤25μm | ≤30μm | |
| Micropipe Density | ≤1 cm-2 | ≤10 cm-2 | ≤20 cm-2 |
| Resistivity | ≥1E8Ω-cm | 75% area: ≥1E8Ω-cm | |
| Polytype | None permitted | Cumulative area≤5% | |
| Hex Plates by high intensity light | None permitted | Qty.6＜100μm | Cumulative area≤5% |
| Visual Carbon Inclusions | Cumulative area≤0.05% | Cumulative area≤10% | N/A |
| Surface finish | Double Side Polish, Si Face CMP (chemical polishing) | ||
| Wafer edge | Bevelling | ||
| Edge chips/indents by diffuse lighting | None permitted≥0.5mm width and depth | Qty.2 <1.0 mm width and depth | |
| Scratches(CS920/CS8520) | Cumulative length≤1*wafer diameter | Cumulative length≤1.5*wafer diameter | |
| Cracks | None permitted | ||
| Edge exclusion | 3mm | ||
2-4 4H HIGH PURITY SEMI-INSULATING SIC SUBSTRATE SPECIFICATION,6”
| SUBSTRATE PROPERTY | A Grade | B Grade | C Grade |
| Diameter | 150.0 mm ± 0.2 mm | ||
| Surface orientation | {0001} ± 0.2° | ||
| Notch orientation | [1-100] ± 5.0° | ||
| Notch depth | 1.0 mm +0.25 mm, -0.00 mm | ||
| Surface Roughness | Si-face Ra≤0.2 nm | ||
| Thickness | 500.0μm ± 25.0μm | ||
| TTV | ≤10μm | ||
| LTV(10mm2) | ≤3μm | ≤5μm | |
| Warp | ≤40μm | ≤60μm | |
| Bow(Absolute) | ≤25μm | ≤40μm | |
| Micropipe Density | ≤1 cm-2 | ≤5 cm-2 | ≤10 cm-2 |
| Resistivity | ≥1E8Ω-cm | 75% area: ≥1E8Ω-cm | |
| Polytype | None permitted | Cumulative area≤5% | |
| Hex Plates by high intensity light | Cumulative area ≤0.05% | Cumulative area ≤0.1% | Cumulative area≤5% |
| Visual Carbon Inclusions | Cumulative area ≤0.05% | Cumulative area ≤10% | N/A |
| Surface finish | Double Side Polish, Si Face CMP(chemical polishing) | ||
| Wafer edge | Bevelling | ||
| Edge chips/indents by diffuse lighting | None permitted ≥0.5mm width and depth | Qty.2 <1.0 mm width and depth | |
| Scratches(CS920/CS8520) | Cumulative length≤1*wafer diameter | Cumulative length≤1.5*wafer diameter | |
| Cracks | None permitted | ||
| Edge exclusion | 3mm | ||
3. Fluorescence PL Diagram of Vsi
See below Fluorescence PL diagram of Vsi, tested by a 2inch,4H, high purity semi insulating SiC substrate.
Fluorescence PL diagram of Vsi
In the high purity semi-insulating SiC substrate market, the current mainstream silicon carbide substrate product specification is 4 inches. Because of high purity without any dopants, the HPSI SiC substrate material keep high resistivity with good uniformity. Semi-insulating SiC substrate is mainly used in the manufacture of gallium nitride radio frequency devices. By growing a gallium nitride epitaxial layer on a SiC wafer of HPSI type, a SiC-based gallium nitride epitaxial wafer is prepared, which can be further made into a GaN RF device.
For more information, please contact us email at [email protected] and [email protected].